Diotec Semiconductor DI010N03PW N-Channel Power MOSFETs
Diotec Semiconductor DI010N03PW N-Channel Power MOSFETs offer a low on-state resistance, a low gate charge (25nC typical), and fast switching times with an Avalanche rating. With a wide -55°C to +150°C junction temperature range, these components offer a 30V drain-source voltage, 1.4W power dissipation, and 20mJ single pulse avalanche energy. The QFN2x2 packaged DI010N03PW MOSFETs are for DC/DC converters, load switches, power management units, battery-powered devices, and commercial/industrial-grade applications.
Features
- Tiny, space-saving QFN2x2 package
- Low profile height
- Low n-state resistance
- Fast switching times
- Low gate charge
- UL 94V-0 case material
- Moisture Sensitivity Level (MSL) 1
- AEC-Q101 qualified (-AQ components only)
- Lead-free, Halogen-free, and RoHS compliant
Applications
- Power managment units
- Battery powered devices
- DC-DC converters
- Load switches
- Commercial/industrial-grade
Specifications
- 30V maximum drain-source voltage
- ±20V maximum continuous gate-source voltage
- 1.4W maximum power dissipation
- 7A (+100°C) or 10A (+25°C) maximum continuous drain current
- 50A maximum peak drain current
- 10A maximum continuous source current
- 35A maximum peak source current
- 20mJ maximum single pulse avalanche energy
- 1120pF typical input capacitance
- 150pF typical output capacitance
- 105pF typical reverse transfer capacitance
- 25nC typical total gate charge
- 5nC typical gate-source charge
- 6nC typical gate-drain charge
- 1.8Ωtypical gate resistance
- -55°C to +150°C junction temperature range
Additional Resources
Related MOSFETs
Diotec Semiconductor Advanced Trench Technology Power MOSFETs
Offered as N, P, or dual N+P channel types in single, dual, and H bridge configurations.
發佈日期: 2023-02-20
| 更新日期: 2023-02-23