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Diodes Incorporated MMBFx N Channel Enhancement Mode MOSFETs

Diodes Incorporated MMBFx N-channel Enhance mode MOSFETs are designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance. The MMBFx MOSFETs provide low gate threshold voltage, input capacitance, and input/output leakage. These MOSFETs from Diodes Incorporated are ideal for high-efficiency power management applications including power management functions and analog switches.

Features

  • Low on-resistance
  • Low gate threshold voltage
  • Low input capacitance
  • Fast switching speed
  • Low input/output leakage
  • Lead-free and fully RoHS compliant
  • Halogen and Antimony free green device
  • AEC-Q101 qualified standards for high reliability
  • PPAP Capable

Specifications

  • Materials
    • SOT23 case
    • Molded plastic case material
    • 94V-0 UL flammability classification rating
    • Level 1 per J-STD-020 moisture sensitivity
    • Matte tin finish annealed over alloy 42 lead frame (Lead-Free Plating) terminals
    • 0.008g weight (approximate)
  • Ratings
    • 60V drain-source voltage
    • 60V drain-gate voltage
    • 417K/W thermal resistance
  • Thermal
    • -55°C to +150°C operating and storage temperature range
  • Electrical
    • 70V typical drain-source breakdown voltage
    • 1.0µA drain current
    • 40pF maximum input capacitance
    • 30pF maximum output capacitance
    • 5.0pF maximum reverse transfer capacitance
    • 10ns maximum turn-on/turn-off time
發佈日期: 2016-05-02 | 更新日期: 2022-03-11