Diodes Incorporated MJD Automotive Medium Power Transistors

Diodes Inc. MJD Automotive Medium Power Transistors are bipolar transistors that are AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities. Each device has a collector-emitter breakdown voltage of 50V or 100V (minimum). The Diodes Inc. MJD Automotive Medium Power Transistors come in a TO-252 (DPAK) package and are ideal for power switching or amplification applications.

Features

  • BVCEO > 100V
  • IC = Up to 6A continuous collector current
  • ICM = Up to 10A peak pulse current
  • Lead-free finish; RoHS compliant
  • Halogen and antimony-free Green device

Mechanical Data

  • TO-252 (DPAK) package
  • Package material is molded plastic, Green molding compound with a UL flammability classification rating of 94V-0
  • Moisture sensitivity of Level 1 per J-STD-020
  • Terminals are matte tin-plated leads finish, solderable per MIL-STD-202, Method 208
  • 0.34 grams (approximate) weight

Package Outline Dimensions

Mechanical Drawing - Diodes Incorporated MJD Automotive Medium Power Transistors
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零件編號 規格書 封裝/外殼 集電極-發射極最大電壓VCEO 集電極-基極電壓VCBO Pd - 功率消耗
MJD2873Q-13 MJD2873Q-13 規格書 TO-252-3 50 V 70 V 2.6 W
MJD31CHQ-13 MJD31CHQ-13 規格書 TO-252-3 100 V 120 V 2.6 W
MJD42CQ-13 MJD42CQ-13 規格書 TO-252-3 100 V 120 V 2.7 W
MJD41CQ-13 MJD41CQ-13 規格書 TO-252-3 100 V 120 V 2.7 W
發佈日期: 2023-03-15 | 更新日期: 2023-03-21