Diodes Incorporated DMTH4004 N-Channel Enhancement Mode MOSFET

Diodes Incorporated DMTH4004 N-Channel Enhancement Mode MOSFETs are designed to minimize the on-state resistance RDS(ON). These MOSFETs are ideal for high ambient temperature environments and are rated up to 175°C. The N-Channel MOSFETs are 100% UIS (Unclamped Inductive Switching) tested in production which ensures more reliable and robust end application. These MOSFETs offer a 40V drain-to-source voltage and minimizes switching losses. In DMTH4004 series the DMTH4004SCTBQ, DMTH4004SPSQ, and DMTH4004LK3 MOSFETs are designed to meet the strict requirements of automotive applications. All these MOSFETs are PPAP (Production Part Approval Process) capable and are qualified to AEC-Q101 standard. Diodes Incorporated DMTH4004 series MOSFETs are ideal for use in engine management systems, body control electronics, and DC-DC converters.

Features

  • Ideal for high ambient temperature environments
  • Low RDS(ON) minimizes power losses
  • Low Qg – minimizes switching losses
  • 100% unclamped inductive switching for a reliable and robust end application
  • Lead-free
  • Halogen and Antimony free
  • Qualified to AEC-Q101 standards for high reliability
  • PPAP capable
  • Moisture sensitivity Level 1 as per J-STD-020
  • 94V-0 flammability rating

Applications

  • Engine management systems
  • Body control electronics
  • DC-DC converters

DMTH4004 N-Channel Enhancement Mode MOSFET Internal Schematic

Schematic - Diodes Incorporated DMTH4004 N-Channel Enhancement Mode MOSFET
發佈日期: 2016-07-04 | 更新日期: 2022-03-11