AP Memory APS6408L-3OC-BA DDR Octal SPI PSRAM
AP Memory APS6408L-3OC-BA Double Data Rate (DDR) Octal SPI PSRAM is designed with auto temperature-compensated self-refresh by the built-in temperature sensor and partial array self-refresh. This octal PSRAM features software reset, reset pin, and an ultra-low power half-sleep mode with data retention. The APS6408L-3OC-BA PSRAM offers a clock rate of up to 133MHz 266Mb/s read/write throughput operating within a 2.7V to 3.6V (VDD) single supply voltage range. This octal PSRAM holds 64MB in capacity and is organized in an 8M x 8-bit configuration. It utilizes a page size of 1024 bytes, and the column addresses range from AY0 to AY9, while row addresses span from AX0 to AX12.The APS6408L-3OC-BA PSRAM features a 250µA maximum standby current at 85°C and operates within the -40°C to 85°C standard temperature range. This octal PSRAM is available in a 6mm x 8mm x 1.2mm miniBGA 24L package, 1.0mm ball pitch, and 0.4mm ball size.
Features
- Auto Temperature Compensated SelfRefresh (ATCSR) by built-in temperature sensor
- Software reset
- Reset pin available
- Output driver LVCMOS with programmable drive strength
- Data Mask (DM) for write data
- Data Strobe (DQS) enabled highspeed read operation
- Register configurable write and read initial latencies
- Write burst length:
- Maximum 1024 bytes
- Minimum 2 bytes
- Wrap and hybrid burst in 16/32/64/128 lengths
- Linear burst command (wraps at page boundary)
Specifications
- Single supply voltage range:
- 2.7V to 3.6V VDD
- 2.7V to 3.6V VDDQ
- Clock rate of up to 133MHz 266Mb/s read/write throughput
- 64MB, 8M x 8-bit with 1024 bytes page size (column address from AY0 to AY9 and row address from AX0 to AX12)
- Self-managed refresh
- Maximum standby current:
- 250µA at 85°C
- 350µA at 105°C
- -40°C to 85°C standard operating temperature range
Package Information
Package Outline Drawing
發佈日期: 2023-11-30
| 更新日期: 2023-12-05
