Infineon Technologies TRENCHSTOP™ 5 IGBT
Infineon TRENCHSTOP™ 5 IGBT是新世代的薄晶圓IGBT(絕緣閘雙極電晶體)，與目前領先的產品相較下，傳導與開關耗損極低。TRENCHSTOP 5是針對開關頻率高於10kHz的應用所設計。晶圓厚度減少25%以上，大幅改善開關及傳導耗損，更將擊穿電壓提高到650V。效能提升幅度驚人，為設計人員打開了嶄新的探索機會。
特點
- 650V擊穿電壓
- 與「HighSpeed 3」系列相比較：
- Qg因數少了2.5倍
- 開關耗損因數減少了2倍
- VCE(sat) 減少了200mV
- 結合了Infineon Technologies的全新 'Rapid' 矽二極體技術
- 低Coss/Eoss
- 溫和的正溫度係數VCE(sat)
- 在不影響可靠性的情况下，匯流排電壓有可能新增50V
- VF的溫度穩定性
- 一流的效率，降低接頭和外殼溫度，提高裝置可靠性
- 更高的功率密度設計
應用
- PFC + PWM技術應用於：
- 焊接
- UPS
- 太陽能
影片
相關產品
Infineon Technologies TRENCHSTOP™ RC-H5 1200V/1350V/1600V IGBTs
IGBTs developed and optimized for the rigorous requirements of induction cooking applications.
Infineon Technologies TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs
High-speed and designed with ultimate efficiency for applications switching faster than 30kHz.
Infineon Technologies TRENCHSTOP™ 5 L5 (Low Saturation 5) IGBTs
Optimized to deliver outstanding performance in designs switching <10kHz.
Infineon Technologies TRENCHSTOP™ 5 F5 Discrete IGBTs
Optimized for switching >60kHz to deliver optimum efficiency
Infineon Technologies TRENCHSTOP™ 5 WR5 Reverse Conducting IGBTs
Special reverse conducting IGBT family optimized for full rated hard switching turn off.
Infineon Technologies TRENCHSTOP™ 5 S5 Medium Speed Switching IGBTs
Medium-speed switching IGBT with full rated current diode.
發佈日期: 2012-12-07
| 更新日期: 2025-10-01