Infineon Technologies Fx3L50R07W2H3FB11 EasyPACK™ IGBT Modules

Infineon Technologies Fx3L50R07W2H3FB11 EasyPACK™ Insulated Gate Bipolar Transistor (IGBT) Modules are 650V, 50A/100A, and 3-level modules with CoolSiC™ Schottky diode and PressFIT contact technology. These modules offer high current density with low switching losses and are optimized for customized development cycle time and cost. The Fx3L50R07W2H3FB11 modules feature an Al2O3 substrate with low thermal resistance, compact design, and rugged mounting with integrated mounting clamps. Typical applications include motor drives, solar applications, 3-level applications, and UPS systems.  

The FS3L50R07W2H3F_B11 and F4-3L50R07W2H3F_B11 EasyPACK modules are designed without base plates, instead featuring a fast, reliable, and low-cost injected screw clamp mount.

Features

  • CoolSiC Schottky diode (gen 5)
  • High-speed IGBT H3
  • Low switching losses
  • 3kVAC 1min insulation
  • compact design
  • Al2Osubstrate with low thermal resistance
  • PressFIT contact technology
  • Rugged mounting due to integrated mounting clamps

Applications

  • Motor drives
  • Solar applications
  • 3-level applications
  • UPS systems

Circuit Diagram

Application Circuit Diagram - Infineon Technologies Fx3L50R07W2H3FB11 EasyPACK™ IGBT Modules
發佈日期: 2020-05-11 | 更新日期: 2025-12-03