Infineon Technologies CoolSiC™ Schottky Diodes

Infineon CoolSiC™ Schottky Diodes provide a relatively high on-state resistance and leakage current. In SiC material, Schottky diodes can reach a much higher breakdown voltage. The Infineon portfolio of SiC Schottky products covers 600V and 650V to 1200V Schottky diodes. Combining a fast silicon-based switch with a CoolSiC™ Schottky diode is often termed a “hybrid” solution. In recent years, Infineon has manufactured several millions of hybrid modules and has seen them installed in various customer products in applications like solar and uninterruptible power supplies (UPS).

Features

  • No reverse recovery charge
  • Purely capacitive switching
  • High operating temperature (Tj, max 175°C)
  • Low turn-off losses
  • Reduction of CoolMOS™ or IGBT turn-on loss
  • System efficiency improvement compared to Si diodes
  • Switching losses independent from load current, switching speed, and temperature
  • Reduced cooling requirements
  • Enables higher frequency/increased power density
  • Higher system reliability due to lower operating temperature
  • Reduced EMI

Applications

  • Server
  • Telecom
  • Solar
  • UPS
  • Energy storage, chargers
  • PC power
  • Motor drives
  • Lighting

Videos

發佈日期: 2019-06-10 | 更新日期: 2024-01-10