最新離散半導體 – Mouser 香港

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分離式半導體的類型

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已用篩選:

製造商 = Toshiba 回到產品標籤以修改您當前的篩選器。

Toshiba N溝道/P溝道功率 MOSFET

03/31/2026

- Ideal for high-speed switching, power management switches, DC-DC converters, and motor drivers.

Toshiba UMOS 11低電壓MOSFET

10/17/2025

- 非常適合用於高效率DC-DC轉換器，採用SOP Advance (N) 封裝形式供應。

Toshiba XCEZ汽車用齊納二極體

08/29/2025

- 具有150mW和300mW兩種耗散功率，並通過了AEC-Q101認證。

Toshiba TRSx SiC蕭特基能障二極體

04/04/2025

- 這些SiC蕭特基能障二極體反向重複峰值電壓 (VRRM) 額定值為1200V。

Toshiba L-TOGL與S-TOGL AEC-Q 40V/80V/100V N通道MOSFET

10/14/2024

- 採用L-TOGL™封裝，可滿足汽車設備對48V系統日益增長的需求。

Toshiba TKx矽N通道MOSFET

09/13/2024

- 提供U-MOSX-H和DTMOSVI型號，具備卓越的性能特性。

Toshiba TPH1400CQ5 Silicon N-Channel MOSFETs

09/10/2024

- Features an 8-pin SMT power MOSFET designed with a U-MOSX-H generation Trench process.

Toshiba TPH1100CQ5 Silicon N-Channel MOSFETs

08/12/2024

- Features an 8-pin SMT power MOSFET designed with a U-MOSX-H generation Trench process.

Toshiba UMOS9-H Silicon N-channel MOSFETs

05/13/2024

- Ideal for high-efficiency DC-to-DC converters, switching voltage regulators, and motor drivers.

Toshiba XCUZ Zener Diodes

01/23/2024

- Designed for automotive usage, features 600mW power dissipation and AEC-Q101 qualified.

Toshiba TRSx65H SiC Schottky Barrier Diodes

07/26/2023

- 650V devices based on third-generation technology utilizing Schottky metal.

Toshiba SSM14N956L MOSFET

06/09/2023

- Features low source-source on-resistance and is RoHS compatible.

Toshiba XPQR3004PB 40V 400A汽車級MOSFET

02/13/2023

- RDS(ON)為0.23mΩ（典型值），閾值電壓 (Vth) 為2V至3V，電流為400A。

Toshiba CSLZ Zener Diodes

11/21/2022

- Housed in a small SL2 package.

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STMicroelectronics STH4N150-2AG N-Channel Power MOSFET

08/10/2026

- Designed to ensure a high level of voltage and robustness for the automotive applications.

STMicroelectronics SGT3D5R10MEB PowerGaN Transistor

08/10/2026

- Designed for high-efficiency and high-power switching applications.

Texas Instruments ESD2CANFD24W-Q1 ESD Protection Diodes

08/04/2026

- Automotive ESD protection diodes for CAN, CAN FD, CAN SIC, and CAN XL networks.

onsemi EMD4DXV6 Digital Transistors ( BRTs)

07/30/2026

- Designed to replace a single device and its external resistor bias network.

onsemi NVNJWS1K6N061L N-Channel MOSFET

07/30/2026

- Features low RDS(on) and low gate threshold with integrated ESD protection.

ROHM Semiconductor 600V Super Junction (SJ) MOSFETs

07/21/2026

- Compact, low-profile package options that provide excellent heat dissipation.

IXYS DK010S3ARP 1000V 10A整流器

07/20/2026

- Features glass-passivated junctions for enhanced stability and is assembled in a DO-214AB package.

IXYS DK610S3RP 1600V通用整流器二極體

07/20/2026

- Space-saving, ideal for automated assembly, and well-suited for DC phase-control applications.

onsemi GaNEXUS™ GaN FETs

07/08/2026

- Wide-bandgap material properties for low gate & output charge, fast switching & enhanced efficiency.

Bourns CDDFN2表面黏著TVS二極體

07/07/2026

- ESD, EFT, and surge protection for external ports of electronic devices, limiting critical damage.

Semtech RCLAMP2891PQ TVS Diode

06/30/2026

- Ultra-low capacitance 1-line, 28V TVS diode, protects high‑speed signal lines from ESD and EOS.

Diotec Semiconductor SI02C120SMA Silicon Carbide (SiC) Schottky Diode

06/29/2026

- Offers a repetitive reverse voltage rating of 1200V and a forward current capability of 2A.

Littelfuse TVS SPA二極體陣列

06/26/2026

- TVS diode arrays for ESD, EFT, and surge protection across data and power interfaces.

Bourns CDSOD323-T24LC-Q Automotive-Grade TVS Diodes

06/26/2026

- Bidirectional automotive-grade TVS diodes in a compact SOD-323 package.

Bourns CDSOD323-TxxSC-Q TVS Diodes

06/25/2026

- Offer a selection of voltage options from 3V to 36V in a bidirectional configuration.

Diodes Incorporated D3V3ZF1BD2CSP Bi-Directional TVS Diode

06/22/2026

- Low-capacitance device designed specifically to protect high-speed differential lines.

Vishay MXP075 MaxSiC® 750V N-Channel MOSFETs

06/19/2026

- Features a 750V drain-source voltage, a fast switching speed & a 3μs short-circuit withstand time.

Navitas Semiconductor 3300V & 2300V Silicon Carbide (SiC) MOSFETs

06/18/2026

- Based on latest GeneSiC™ trench-assisted planar (TAP) technology, offers flexible packaging formats.

Infineon Technologies EasyPACK™ S Modules

06/12/2026

- Efficient power conversion in a compact, easy-to-integrate package built for modern power designs.

Infineon Technologies OptiMOS™ 7 100V Automotive Power MOSFETs

05/27/2026

- Advanced N‑channel devices engineered for high-efficiency power switching.

Texas Instruments 2N7002L 6V N-channel MOSFETs

05/18/2026

- Designed to minimize the on-state resistance while maintaining fast switching performance.

Bourns CDSOT23-SM712-Q Surface-Mount TVS Diode

05/12/2026

- Provides protection for data ports in accordance with IEC 61000-4-2, IEC 61000-4-4, & IEC 61000-4-5.

Infineon Technologies CIPOS™ Prime車用CoolSiC™功率模組

05/06/2026

- Power Modules are designed for high performance in xEV applications.

Littelfuse TP1KSMB-FL FlatSuppressX™ TVS二極體

05/04/2026

- Designed specifically to protect sensitive electronic equipment from voltage transients.

Littelfuse TP5.0SMD-FL FlatSuppressX™ TVS二極體

05/04/2026

- 5000W peak pulse power capability using a 10/1000µs waveform and 6.5W power dissipation.

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分離式半導體的類型

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