|
|
DRAM 512M (64Mx8) 200MHz 2.5v DDR SDRAM
- IS43R86400D-5TL
- ISSI
-
1:
HK$81.21
-
96庫存量
-
工廠指定訂單
|
Mouser 元件編號
870-IS43R86400D-5TL
工廠指定訂單
|
ISSI
|
DRAM 512M (64Mx8) 200MHz 2.5v DDR SDRAM
|
|
96庫存量
|
|
最少: 1
倍數: 1
|
|
|
SDRAM - DDR
|
512 Mbit
|
8 bit
|
200 MHz
|
TSOP-II-66
|
64 M x 8
|
5 ns
|
2.5 V
|
2.7 V
|
0 C
|
+ 70 C
|
IS43R86400D
|
Tray
|
|
|
|
DRAM 256M, 2.5V, 200Mhz 16Mx16 DDR SDRAM
- IS46R16160D-5TLA1
- ISSI
-
1:
HK$90.26
-
54庫存量
-
工廠指定訂單
|
Mouser 元件編號
870-IS46R16160D5TLA1
工廠指定訂單
|
ISSI
|
DRAM 256M, 2.5V, 200Mhz 16Mx16 DDR SDRAM
|
|
54庫存量
|
|
最少: 1
倍數: 1
|
|
|
SDRAM - DDR
|
256 Mbit
|
16 bit
|
200 MHz
|
TSOP-II-66
|
16 M x 16
|
5 ns
|
2.3 V
|
2.7 V
|
- 40 C
|
+ 85 C
|
IS46R16160D
|
Tray
|
|
|
|
DRAM SPCM
- S80KS5122GABHV020
- Infineon Technologies
-
1:
HK$183.55
-
338在途量
|
Mouser 元件編號
727-S5122GABHV020
|
Infineon Technologies
|
DRAM SPCM
|
|
338在途量
|
|
最少: 1
倍數: 1
|
|
|
HyperRAM
|
512 Mbit
|
8 bit
|
200 MHz
|
FBGA-24
|
64 M x 8
|
35 ns
|
1.7 V
|
2 V
|
- 40 C
|
+ 105 C
|
|
Tray
|
|
|
|
DRAM SPCM
- S27KS0642GABHI030
- Infineon Technologies
-
1:
HK$113.03
-
313在途量
-
壽命結束
|
Mouser 元件編號
727-S27KS0642GABHI03
壽命結束
|
Infineon Technologies
|
DRAM SPCM
|
|
313在途量
|
|
最少: 1
倍數: 1
|
|
|
HyperRAM
|
64 Mbit
|
8 bit
|
200 MHz
|
FBGA-24
|
8 M x 8
|
35 ns
|
1.7 V
|
2 V
|
- 40 C
|
+ 85 C
|
|
Tray
|
|
|
|
DRAM SPCM
- S27KS0643GABHV020
- Infineon Technologies
-
1:
HK$120.83
-
227在途量
-
壽命結束
|
Mouser 元件編號
727-S27KS0643GABHV02
壽命結束
|
Infineon Technologies
|
DRAM SPCM
|
|
227在途量
|
|
最少: 1
倍數: 1
|
|
|
HyperRAM
|
64 Mbit
|
8 bit
|
200 MHz
|
FBGA-24
|
8 M x 8
|
35 ns
|
1.7 V
|
2 V
|
- 40 C
|
+ 105 C
|
|
Tray
|
|
|
|
DRAM SPCM
Infineon Technologies S80KS2562GABHI020
- S80KS2562GABHI020
- Infineon Technologies
-
1:
HK$184.87
-
338在途量
|
Mouser 元件編號
727-S2562GABHI020
|
Infineon Technologies
|
DRAM SPCM
|
|
338在途量
|
|
最少: 1
倍數: 1
|
|
|
HyperRAM
|
256 Mbit
|
8 bit
|
200 MHz
|
FBGA-24
|
32 M x 8
|
35 ns
|
1.7 V
|
2 V
|
- 40 C
|
+ 85 C
|
|
Tray
|
|
|
|
DRAM SPCM
Infineon Technologies S80KS2562GABHV020
- S80KS2562GABHV020
- Infineon Technologies
-
1:
HK$197.77
-
338在途量
|
Mouser 元件編號
727-S2562GABHV020
|
Infineon Technologies
|
DRAM SPCM
|
|
338在途量
|
|
最少: 1
倍數: 1
|
|
|
HyperRAM
|
256 Mbit
|
8 bit
|
200 MHz
|
FBGA-24
|
32 M x 8
|
35 ns
|
1.7 V
|
2 V
|
- 40 C
|
+ 105 C
|
|
Tray
|
|
|
|
DRAM 512Mb 1.8V 200Mhz Mobile DDR
- IS43LR16320C-5BLI
- ISSI
-
1:
HK$132.10
-
300在途量
|
Mouser 元件編號
870-IS43LR16320C5BLI
|
ISSI
|
DRAM 512Mb 1.8V 200Mhz Mobile DDR
|
|
300在途量
|
|
最少: 1
倍數: 1
|
|
|
SDRAM Mobile - DDR
|
512 Mbit
|
16 bit
|
200 MHz
|
BGA-60
|
32 M x 16
|
5 ns
|
1.7 V
|
1.95 V
|
- 40 C
|
+ 85 C
|
IS43LR16320C
|
Tray
|
|
|
|
DRAM 64Mb, HyperRAM, 8Mbx8, 1.8V, 200MHz, 24-ball TFBGA, RoHS
- IS66WVH8M8FALL-200B1LI
- ISSI
-
1:
HK$44.72
-
960在途量
|
Mouser 元件編號
870-VH8M8FALL200B1LI
|
ISSI
|
DRAM 64Mb, HyperRAM, 8Mbx8, 1.8V, 200MHz, 24-ball TFBGA, RoHS
|
|
960在途量
在途量:
480 預期14/4/2027
480 預期19/4/2027
|
|
最少: 1
倍數: 1
|
|
|
HyperRAM
|
64 Mbit
|
8 bit
|
200 MHz
|
TFBGA-24
|
8 M x 8
|
35 ns
|
1.7 V
|
2 V
|
- 40 C
|
+ 85 C
|
|
|
|
|
|
DRAM SDRAM, 64Mb, 4M x 16, 3.3V, 54pin TSOP II, 200Mhz, Commerical Temp - Tray
- AS4C4M16SA-5TCN
- Alliance Memory
-
1:
HK$94.78
-
108預期2/12/2026
|
Mouser 元件編號
913-AS4C4M16SA-5TCN
|
Alliance Memory
|
DRAM SDRAM, 64Mb, 4M x 16, 3.3V, 54pin TSOP II, 200Mhz, Commerical Temp - Tray
|
|
108預期2/12/2026
|
|
最少: 1
倍數: 1
|
|
|
SDRAM
|
64 Mbit
|
16 bit
|
200 MHz
|
TSOP-II-54
|
4 M x 16
|
4.5 ns
|
3 V
|
3.6 V
|
0 C
|
+ 70 C
|
AS4C4M16SA
|
Tray
|
|
|
|
DRAM SPCM
- S80KS5123GABHV020
- Infineon Technologies
-
338:
HK$216.27
-
無庫存前置作業時間 53 週
|
Mouser 元件編號
727-S5123GABHV020
|
Infineon Technologies
|
DRAM SPCM
|
|
無庫存前置作業時間 53 週
|
|
最少: 338
倍數: 338
|
|
|
HyperRAM
|
512 Mbit
|
8 bit
|
200 MHz
|
FBGA-24
|
64 M x 8
|
35 ns
|
1.7 V
|
2 V
|
- 40 C
|
+ 105 C
|
|
Tray
|
|
|
|
DRAM SPCM
- S80KS2562GABHB020
- Infineon Technologies
-
676:
HK$191.12
-
無庫存前置作業時間 53 週
|
Mouser 元件編號
727-S80KS2562GABHB02
|
Infineon Technologies
|
DRAM SPCM
|
|
無庫存前置作業時間 53 週
|
|
最少: 676
倍數: 676
|
|
|
HyperRAM
|
256 Mbit
|
|
200 MHz
|
FBGA-24
|
|
35 ns
|
1.7 V
|
2 V
|
- 40 C
|
+ 105 C
|
|
Tray
|
|
|
|
DRAM IoT RAM 128Mb OPI (x8,x16) DDR 200MHz, 1.8V, Ind. Temp., WLCSP Suggested Alt APS12808O-OBR-WB same density NRND
- APS128XXN-OBRA-WA
- AP Memory
-
5,000:
HK$30.25
-
無庫存前置作業時間 20 週
|
Mouser 元件編號
878-APS128XXN-OBRAWA
|
AP Memory
|
DRAM IoT RAM 128Mb OPI (x8,x16) DDR 200MHz, 1.8V, Ind. Temp., WLCSP Suggested Alt APS12808O-OBR-WB same density NRND
|
|
無庫存前置作業時間 20 週
|
|
最少: 5,000
倍數: 5,000
:
5,000
|
|
|
PSRAM (Pseudo SRAM)
|
128 Mbit
|
8 bit / 16 bit
|
200 MHz
|
WLCSP-24
|
16 M x 8/8 M x 16
|
|
1.62 V
|
1.98 V
|
- 40 C
|
+ 85 C
|
IoT RAM
|
Reel
|
|
|
|
DRAM IoT RAM 256Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24 (OctaRAM for Renesas RZ/A SoC)
- APS25608N-OCH-BD
- AP Memory
-
4,800:
HK$48.83
-
無庫存前置作業時間 20 週
|
Mouser 元件編號
878-APS25608N-OCH-BD
|
AP Memory
|
DRAM IoT RAM 256Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24 (OctaRAM for Renesas RZ/A SoC)
|
|
無庫存前置作業時間 20 週
|
|
最少: 4,800
倍數: 4,800
|
|
|
PSRAM (Pseudo SRAM)
|
256 Mbit
|
8 bit
|
200 MHz
|
BGA-24
|
32 M x 8
|
6.5 ns
|
1.62 V
|
1.98 V
|
- 40 C
|
+ 85 C
|
|
Tray
|
|
|
|
DRAM IoT RAM 256Mb OPI (x8,x16) DDR 200MHz, 1.8V, Ind. Temp., WLCSP Suggested Alt APS256XXN-OB9-WA same density NRND
- APS256XXN-OBR-WA
- AP Memory
-
5,000:
HK$30.25
-
無庫存前置作業時間 20 週
|
Mouser 元件編號
878-APS256XXN-OBR-WA
|
AP Memory
|
DRAM IoT RAM 256Mb OPI (x8,x16) DDR 200MHz, 1.8V, Ind. Temp., WLCSP Suggested Alt APS256XXN-OB9-WA same density NRND
|
|
無庫存前置作業時間 20 週
|
|
最少: 5,000
倍數: 5,000
:
5,000
|
|
|
PSRAM (Pseudo SRAM)
|
256 Mbit
|
8 bit / 16 bit
|
200 MHz
|
WLCSP-24
|
32 M x 8/16 M x 16
|
|
1.62 V
|
1.98 V
|
- 40 C
|
+ 85 C
|
IoT RAM
|
Reel
|
|
|
|
DRAM IoT RAM 64Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., WLCSP
- APS6408L-OBM-WH
- AP Memory
-
5,000:
HK$13.56
-
無庫存前置作業時間 20 週
|
Mouser 元件編號
878-APS6408L-OBM-WH
|
AP Memory
|
DRAM IoT RAM 64Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., WLCSP
|
|
無庫存前置作業時間 20 週
|
|
最少: 5,000
倍數: 5,000
:
5,000
|
|
|
PSRAM (Pseudo SRAM)
|
64 Mbit
|
8 bit
|
200 MHz
|
WLCSP-13
|
8 M x 8
|
|
1.62 V
|
1.98 V
|
- 40 C
|
+ 85 C
|
IoT RAM
|
Reel
|
|
|
|
DRAM IoT RAM 64Mb OPI (x8) DDR 200MHz, 1.8V, Ext. Temp., BGA24
- APS6408L-OBMX-BA
- AP Memory
-
4,800:
HK$26.72
-
無庫存前置作業時間 20 週
|
Mouser 元件編號
878-APS6408L-OBMX-BA
|
AP Memory
|
DRAM IoT RAM 64Mb OPI (x8) DDR 200MHz, 1.8V, Ext. Temp., BGA24
|
|
無庫存前置作業時間 20 週
|
|
最少: 4,800
倍數: 4,800
|
|
|
PSRAM (Pseudo SRAM)
|
64 Mbit
|
8 bit
|
200 MHz
|
BGA-24
|
8 M x 8
|
|
1.62 V
|
1.98 V
|
- 40 C
|
+ 105 C
|
IoT RAM
|
Tray
|
|
|
|
DRAM SPCM
Infineon Technologies S80KS2564GACHA040
- S80KS2564GACHA040
- Infineon Technologies
-
260:
HK$184.87
-
無庫存前置作業時間 53 週
|
Mouser 元件編號
726-80KS2564GACHA040
|
Infineon Technologies
|
DRAM SPCM
|
|
無庫存前置作業時間 53 週
|
|
最少: 260
倍數: 260
|
|
|
HyperRAM
|
256 Mbit
|
16 bit
|
200 MHz
|
FBGA-49
|
|
35 ns
|
1.7 V
|
2 V
|
- 40 C
|
+ 85 C
|
|
Tray
|
|
|
|
DRAM SPCM
Infineon Technologies S80KS2564GACHA043
- S80KS2564GACHA043
- Infineon Technologies
-
2,500:
HK$169.83
-
無庫存前置作業時間 53 週
|
Mouser 元件編號
726-80KS2564GACHA043
|
Infineon Technologies
|
DRAM SPCM
|
|
無庫存前置作業時間 53 週
|
|
最少: 2,500
倍數: 2,500
:
2,500
|
|
|
HyperRAM
|
256 Mbit
|
32 bit
|
200 MHz
|
FBGA-49
|
|
35 ns
|
1.7 V
|
2 V
|
- 40 C
|
+ 85 C
|
|
Reel
|
|
|
|
DRAM SPCM
Infineon Technologies S80KS2564GACHB040
- S80KS2564GACHB040
- Infineon Technologies
-
260:
HK$200.16
-
無庫存前置作業時間 53 週
|
Mouser 元件編號
726-80KS2564GACHB040
|
Infineon Technologies
|
DRAM SPCM
|
|
無庫存前置作業時間 53 週
|
|
最少: 260
倍數: 260
|
|
|
HyperRAM
|
256 Mbit
|
32 bit
|
200 MHz
|
FBGA-49
|
|
35 ns
|
1.7 V
|
2 V
|
- 40 C
|
+ 105 C
|
|
Tray
|
|
|
|
DRAM SPCM
Infineon Technologies S80KS2564GACHB043
- S80KS2564GACHB043
- Infineon Technologies
-
2,500:
HK$183.88
-
無庫存前置作業時間 53 週
|
Mouser 元件編號
726-80KS2564GACHB043
|
Infineon Technologies
|
DRAM SPCM
|
|
無庫存前置作業時間 53 週
|
|
最少: 2,500
倍數: 2,500
:
2,500
|
|
|
HyperRAM
|
256 Mbit
|
16 bit
|
200 MHz
|
FBGA-49
|
|
35 ns
|
1.7 V
|
2 V
|
- 40 C
|
+ 105 C
|
|
Reel
|
|
|
|
DRAM SPCM
Infineon Technologies S27KL0643GABHV020
- S27KL0643GABHV020
- Infineon Technologies
-
3,380:
HK$92.72
-
無庫存前置作業時間 53 週
|
Mouser 元件編號
727-S27KL0643GABHV20
|
Infineon Technologies
|
DRAM SPCM
|
|
無庫存前置作業時間 53 週
|
|
最少: 3,380
倍數: 3,380
|
|
|
HyperRAM
|
64 Mbit
|
8 bit
|
200 MHz
|
|
8 M x 8
|
35 ns
|
2.7 V
|
3.6 V
|
- 40 C
|
+ 105 C
|
|
Tray
|
|
|
|
DRAM IoT RAM 128Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., WLCSP
AP Memory APS12808O-OBR-WB
- APS12808O-OBR-WB
- AP Memory
-
5,000:
HK$22.36
-
無庫存前置作業時間 15 週
|
Mouser 元件編號
878-APS12808O-OBR-WB
|
AP Memory
|
DRAM IoT RAM 128Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., WLCSP
|
|
無庫存前置作業時間 15 週
|
|
最少: 5,000
倍數: 5,000
:
5,000
|
|
|
PSRAM (Pseudo SRAM)
|
128 Mbit
|
8 bit
|
200 MHz
|
WLCSP-15
|
16 M x 8
|
|
1.62 V
|
1.98 V
|
- 40 C
|
+ 85 C
|
|
Reel
|
|
|
|
DRAM DDR1, 256Mb, 16M x 16, 2.5V, 66pin TSOP II, 200 MHz, Commercial Temp (A), TAPE & REEL
- AS4C16M16D1A-5TCNTR
- Alliance Memory
-
1:
HK$133.58
-
無庫存前置作業時間 12 週
|
Mouser 元件編號
913-4C16M16D1A5TCNTR
|
Alliance Memory
|
DRAM DDR1, 256Mb, 16M x 16, 2.5V, 66pin TSOP II, 200 MHz, Commercial Temp (A), TAPE & REEL
|
|
無庫存前置作業時間 12 週
|
|
最少: 1
倍數: 1
:
1,000
|
|
|
SDRAM - DDR
|
256 Mbit
|
16 bit
|
200 MHz
|
TSOP-II-66
|
16 M x 16
|
700 ps
|
2.3 V
|
2.7 V
|
0 C
|
+ 70 C
|
AS4C16M16D1A
|
Reel, Cut Tape, MouseReel
|
|
|
|
DRAM DDR1, 128Mb, 8M x 16, 2.5V, 66pin TSOP II, 200 MHz, Commercial Temp A Die, T&R
- AS4C8M16D1A-5TCNTR
- Alliance Memory
-
1,000:
HK$78.25
-
無庫存前置作業時間 8 週
|
Mouser 元件編號
913-4C8M16D1A-5TCNTR
|
Alliance Memory
|
DRAM DDR1, 128Mb, 8M x 16, 2.5V, 66pin TSOP II, 200 MHz, Commercial Temp A Die, T&R
|
|
無庫存前置作業時間 8 週
|
|
最少: 1,000
倍數: 1,000
:
1,000
|
|
|
SDRAM - DDR
|
128 Mbit
|
16 bit
|
200 MHz
|
TSOP-II-66
|
8 M x 16
|
700 ps
|
2.3 V
|
2.7 V
|
0 C
|
+ 70 C
|
AS4C8M16D1A
|
Reel
|
|