CGHV59070F

MACOM
941-CGHV59070F
CGHV59070F

Mfr.:

Description:
GaN FETs GaN HEMT 4.4-5.9GHz, 70 Watt

Datasheet:
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Learn more about MACOM CGHV59070F

Product Attribute Attribute Value Select Attribute
MACOM
Product Category: GaN FETs
RoHS:  
Screw Mount
440224
N-Channel
150 V
6.3 A
- 40 C
+ 150 C
5.9 GHz
4.4 GHz
GaN
Brand: MACOM
Gain: 14 dB
Output Power: 76 W
Packaging: Tray
Product Type: GaN FETs
Factory Pack Quantity: 25
Subcategory: Transistors
Transistor Type: GaN HEMT
Vgs - Gate-Source Breakdown Voltage: - 10 V, 2 V
Unit Weight: 7.797 g
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Compliance Codes
CAHTS:
8541290000
USHTS:
8541290055
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
United States
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

CGHV59070 70W RF Power GaN HEMT

MACOM CGHV59070 RF Power Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) provides a general-purpose, broadband solution to a variety of RF and microwave applications. Operating from a 50V rail, the module delivers high efficiency, high gain, and wide bandwidth capabilities. This 70W internally matched GaN HEMT is ideal for linear and compressed amplifier circuits. MACOM CGHV59070 70W RF Power GaN HEMT is offered in a 440224 package.

Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
75
Expected 30/4/2027
Factory Lead Time:
26
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
HK$-.--
Ext. Price:
HK$-.--
Est. Tariff:
This Product Ships FREE

Pricing (HKD)

Qty. Unit Price
Ext. Price
HK$5,747.59 HK$5,747.59
HK$5,043.79 HK$50,437.90

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