EasyDUAL™ 1B IGBT Modules

Infineon Technologies EasyDUAL™ 1B IGBT Modules with CoolSiC™ MOSFETs deliver very low stray inductance and outstanding efficiency enabling higher frequencies, increased power density, and reduced cooling requirements. The 1200V, 8mΩ half-bridge modules feature an integrated NTC temperature sensor and PressFIT contact technology. Thermal interface material is available on the xHP_B11 variants. These devices feature 0 to 5V and +15V to +18V recommended gate drive voltage ranges, maximum gate-source voltages of +23V or -10V, and 17mΩ or 33mΩ drain-source on resistance options. Integrated mounting clamps provide rugged mounting assurance.

結果: 8
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 類型 技術 系列 封裝
Infineon Technologies 離散半導體模組 EASY 48庫存量
HK$415.77
HK$331.27
最少: 1
倍數: 1
Si M1H Tray
Infineon Technologies 離散半導體模組 CoolSiC MOSFET halfbridge module 1200 V 35庫存量
HK$250.79
HK$194.24
最少: 1
倍數: 1
Half Bridge Si M1H Tray
Infineon Technologies 離散半導體模組 CoolSiC MOSFET half-bridge module 1200 V 263庫存量
HK$847.24
HK$615.35
HK$615.27
最少: 1
倍數: 1
Half Bridge Si Tray
Infineon Technologies 離散半導體模組 Half-bridge 1200 V module with CoolSiC MOSFET 3庫存量
HK$739.96
HK$563.65
HK$531.67
最少: 1
倍數: 1
Half Bridge Si M1H Tray
Infineon Technologies 離散半導體模組 Half-bridge 1200 V module with CoolSiC MOSFET 4庫存量
HK$582.96
HK$413.79
HK$413.71
最少: 1
倍數: 1
Half Bridge Si M1H Tray
Infineon Technologies 離散半導體模組 Half-bridge 1200 V module with CoolSiC MOSFET 19庫存量
HK$418.15
HK$283.01
HK$282.93
最少: 1
倍數: 1
Half Bridge Si M1H Tray
Infineon Technologies 離散半導體模組 Half-bridge 1200 V module with CoolSiC MOSFET 無庫存前置作業時間 33 週
HK$534.88
HK$372.61
最少: 1
倍數: 1
Half Bridge Si M1H Tray
Infineon Technologies 離散半導體模組 Half-bridge 1200 V module with CoolSiC MOSFET 無庫存前置作業時間 33 週
HK$381.98
HK$341.29
HK$246.35
最少: 1
倍數: 1
Half Bridge Si M1H Tray