GP2T080A120H 1200V SiC MOSFET

SemiQ GP2T080A120H 1200V SiC MOSFET delivers lower capacitance and higher system efficiency. The GP2T080A120H features high-speed switching, a driver source pin for gate driving, and a reliable body diode. The GP2T080A120H 1200V SiC MOSFET parts are tested to above 1400V and avalanche tested to 200mJ. Furthermore, the GP2T080A120H s easy to parallel and offers a lower Qg. The device is ideal for solar inverters, EV charging stations, induction heating and welding, and motor drivers.

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Description Datasheet Availability Pricing (HKD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
SemiQ SiC MOSFETs 1200V, 80mOhm, TO-263-7L MOSFET
Datasheet
6In Stock
HK$67.65
HK$47.68
HK$38.47
HK$34.20
HK$30.33
Min.: 1
Mult.: 1
SMD/SMT TO-263-7 1 Channel 1.2 kV 35 A 77 mOhms - 10 V, + 25 V 4 V 53 nC - 55 C + 175 C 188 W Enhancement
SemiQ SiC MOSFETs SiC MOSFET 1200V 80mohm TO-247-4L
Datasheet
2,130Expected 7/12/2026
HK$67.98
HK$47.92
HK$38.63
HK$34.36
HK$30.41
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 35 A 77 mOhms - 10 V, + 25 V 4 V 61 nC - 55 C + 175 C 188 W Enhancement