CoolGaN™ Gen 2 650V Power Transistors

Infineon Technologies CoolGaN™ Gen 2 650V Power Transistors feature highly efficient GaN (gallium nitride) transistor technology for power conversion in a voltage range up to 650V. Infineon’s GaN technology brings the e‑mode concept to maturity with high volumes of end-to-end production. This pioneering quality ensures the highest standards and offers the most reliable performance. The enhancement mode CoolGaN™ Gen 2 650V power transistors improve system efficiency and power density with ultra-fast switching.

Results: 12
Select Image Part # Mfr. Description Datasheet Availability Pricing (HKD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Technology
Infineon Technologies GaN FETs HV GAN DISCRETES 4,511In Stock
Cut Tape
HK$32.06
HK$16.28
HK$14.71
HK$12.08
HK$11.59
Reel
HK$9.78
Min.: 1
Mult.: 1
: 5,000
SMD/SMT HEMT 1 Channel 650 V 13 A 170 mOhms - 10 V 1.6 V 2.6 nC - 55 C + 150 C 46 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 4,815In Stock
Cut Tape
HK$23.59
HK$11.67
HK$10.52
HK$8.47
Reel
HK$6.61
Min.: 1
Mult.: 1
: 5,000
SMD/SMT HEMT 1 Channel 650 V 9.2 A 240 mOhms - 10 V 1.6 V 1.8 nC - 55 C + 150 C 33 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 4,699In Stock
Cut Tape
HK$20.55
HK$10.03
HK$8.55
HK$7.13
Reel
HK$5.60
Min.: 1
Mult.: 1
: 5,000
SMD/SMT HEMT 1 Channel 650 V 7.2 A 330 mOhms - 10 V 1.6 V 1.4 nC - 55 C + 150 C 28 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 1,547In Stock
1,800Expected 17/12/2026
Cut Tape
HK$87.95
HK$48.83
HK$46.36
HK$37.89
Reel
HK$37.81
Min.: 1
Mult.: 1
: 1,800
SMD/SMT HEMT 1 Channel 650 V 42 mOhms - 10 V 1.6 V 11 nC - 55 C + 150 C Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 798In Stock
1,800Expected 7/12/2026
Cut Tape
HK$65.02
HK$38.31
HK$35.18
HK$34.36
HK$28.28
Reel
HK$28.19
Min.: 1
Mult.: 1
: 1,800
SMD/SMT HEMT 1 Channel 650 V 38 A 54 mOhms - 10 V 1.6 V 8.4 nC - 55 C + 150 C 125 W GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 1,163In Stock
Cut Tape
HK$41.02
HK$24.00
HK$20.06
HK$16.85
Reel
HK$13.07
Min.: 1
Mult.: 1
: 1,800
SMD/SMT HEMT 1 Channel 650 V 15 A 140 mOhms - 10 V 1.6 V 3.4 nC - 40 C + 150 C Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 556In Stock
800Expected 7/12/2026
Cut Tape
HK$110.31
HK$73.49
HK$68.06
HK$59.02
Reel
HK$49.48
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 61 A 30 mOhms - 10 V 1.6 V 16 nC - 55 C + 150 C 181 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 453In Stock
800Expected 30/11/2026
Cut Tape
HK$90.67
HK$50.47
HK$48.17
HK$39.37
Reel
HK$39.29
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 42 mOhms - 10 V 1.6 V 11 nC - 55 C + 150 C 132 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 1,228In Stock
Cut Tape
HK$72.58
HK$39.54
HK$35.43
Reel
HK$31.32
HK$29.35
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 54 mOhms - 10 V 1.6 V 8.4 nC - 55 C + 150 C 104 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 583In Stock
Cut Tape
HK$60.58
HK$32.47
HK$29.76
HK$23.92
Reel
HK$23.10
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 66 mOhms - 10 V 1.6 V 6.6 nC - 55 C + 150 C 83 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES
23,329On Order
Cut Tape
HK$104.89
HK$59.27
HK$58.36
HK$47.68
Reel
HK$47.59
Min.: 1
Mult.: 1
: 1,800
SMD/SMT HEMT 1 Channel 650 V 67 A 30 mOhms - 10 V 1.6 V 16 nC - 55 C + 150 C 219 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES
5,400On Order
Cut Tape
HK$60.09
HK$33.29
HK$30.50
HK$28.77
HK$22.28
Reel
HK$22.28
Min.: 1
Mult.: 1
: 1,800
SMD/SMT HEMT 1 Channel 650 V 66 mOhms - 10 V 1.6 V 6.6 nC - 55 C + 150 C 104 W Enhancement GaN