Results: 7
Select Image Part # Mfr. Description Datasheet Availability Pricing (HKD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Package/Case Mounting Style Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Maximum Gate Emitter Voltage Continuous Collector Current at 25 C Pd - Power Dissipation Minimum Operating Temperature Maximum Operating Temperature Series Packaging

onsemi IGBTs 1200V, 40A Trench Field Stop VII (FS7) Discrete IGBT 245In Stock
HK$68.23
HK$39.78
HK$39.70
HK$34.28
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 1.2 kV 20 V 80 A 600 W - 55 C + 175 C FGHL40T120RWD Tube
onsemi IGBTs 1200V, 40A Field Stop VII (FS7) Discrete IGBT Fast Switching 270In Stock
HK$49.90
HK$28.36
HK$23.59
HK$22.61
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.68 V 30 V 70 A 469 W - 55 C + 175 C FGHL40T120SWD Tube

onsemi IGBTs FS4 LOW VCESAT IGBT 650V 40A TO247-3L WITH FULL RATED CURRENT DIODE 392In Stock
HK$44.55
HK$25.15
HK$20.71
HK$19.40
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 650 V 1.15 V 20 V 60 A 273 W - 55 C + 175 C FGHL40T65LQDT Tube

onsemi IGBTs 650V FS4 Trench IGBT 101In Stock
HK$44.72
HK$25.24
HK$20.80
HK$19.48
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 100 A 268 W - 55 C + 175 C FGH50T65SQD Tube

onsemi IGBTs 1200V, 60A Trench Field Stop VII (FS7) Discrete IGBT 17In Stock
450Expected 29/12/2026
HK$90.34
HK$59.51
HK$44.88
Min.: 1
Mult.: 1
Max.: 450
Si TO-247-3 Through Hole Single 1.2 kV 20 V 120 A 833 W - 55 C + 175 C FGHL60T120RWD Tube

onsemi IGBTs 650V/35A FAST IGBT FSII T 29In Stock
90Expected 14/12/2026
HK$54.42
HK$31.15
Min.: 1
Mult.: 1
Max.: 30
Si TO-247-3 Through Hole Single 650 V 1.7 V - 20 V, 20 V 70 A 300 W - 55 C + 175 C NGTB35N65FL2 Tube

onsemi IGBTs FS4 LOW VCESAT IGBT 650V 450In Stock
HK$41.68
HK$27.37
HK$20.39
HK$15.54
HK$14.96
Min.: 1
Mult.: 1
Si TO-247-4 Through Hole Single 650 V 1.15 V 20 V 80 A 341 W - 55 C + 175 C FGHL50T65LQDTL4 Tube