High-Performance SiC FETs

onsemi High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.

結果: 69
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 安裝風格 封裝/外殼 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 資格 公司名稱
onsemi 碳化矽MOSFET 1700V/400MOSICFETG3TO263-7 685庫存量
800預期21/12/2026
帶狀裁切
HK$95.68
HK$67.65
HK$50.22
HK$47.51
捲
HK$47.51
最少: 1
倍數: 1
最大: 800
: 800
SMD/SMT D2PAK-7 1 Channel 1.7 kV 7.6 A 410 mOhms - 25 V, + 25 V 6 V 23.1 nC - 55 C + 175 C 100 W Enhancement SiC FET
onsemi 碳化矽MOSFET 650V/40MOSICFETG3TO247-4 3,278庫存量
HK$162.76
HK$97.41
最少: 1
倍數: 1
Through Hole TO-247-4 1 Channel 650 V 54 A 52 mOhms - 25 V, + 25 V 4 V 43 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 750V/6MOSICFETG4TO247-4 576庫存量
HK$451.69
HK$322.31
最少: 1
倍數: 1
Through Hole TO-247-4 1 Channel 750 V 120 A 5.9 mOhms - 20 V, + 20 V 6 V 164 nC - 55 C + 175 C 714 W Enhancement SiC FET
onsemi 碳化矽MOSFET 650V/30MOSICFETG3TO220 352庫存量
1,000預期28/12/2026
HK$218.57
HK$175.00
HK$151.33
HK$135.63
最少: 1
倍數: 1
最大: 1,000
Through Hole TO-220-3 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 1200V/40MOSICFETG3TO247-3 214庫存量
HK$241.50
HK$180.26
HK$179.61
HK$161.03
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 1.2 kV 65 A 45 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 429 W Enhancement SiC FET
onsemi 碳化矽MOSFET 650V/30MOSICFETG3TO247-3 513庫存量
HK$219.89
HK$136.45
最少: 1
倍數: 1
最大: 300
Through Hole TO-247-3 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 750V/60MOSICFETG4TO247 1,258庫存量
HK$127.33
HK$75.87
HK$64.61
HK$59.43
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 750 V 28 A 74 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 155 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 750V/11MOSICFETG4TO263-7 279庫存量
帶狀裁切
HK$243.15
HK$192.59
HK$179.61
HK$162.43
捲
HK$162.43
最少: 1
倍數: 1
: 800
SMD/SMT D2PAK-7L 1 Channel 750 V 104 A 11 mOhms - 20 V, + 20 V 5.5 V 75 nC - 55 C + 175 C 357 W Enhancement SiC FET
onsemi 碳化矽MOSFET 750V/18MOSICFETG4TO263-7 278庫存量
帶狀裁切
HK$201.06
HK$150.18
HK$129.88
HK$116.40
捲
HK$116.40
最少: 1
倍數: 1
: 800
SMD/SMT D2PAK-7 1 Channel 750 V 72 A 18 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 259 W Enhancement SiC FET
onsemi 碳化矽MOSFET 650V/80MOSICFETG3TO247 626庫存量
HK$101.19
HK$57.95
HK$53.76
HK$51.46
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 650 V 31 A 100 mOhms - 12 V, + 12 V 6 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 750V/60MOSICFETG4TO263 1,266庫存量
帶狀裁切
HK$64.69
HK$34.94
HK$34.61
HK$33.37
捲
HK$33.37
HK$29.18
最少: 1
倍數: 1
: 800
SMD/SMT D2PAK-7 1 Channel 750 V 25.8 A 74 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 128 W Enhancement SiC FET
onsemi 碳化矽MOSFET 1200V/80MOSICFETG3TO26 618庫存量
帶狀裁切
HK$158.07
HK$99.13
HK$93.87
捲
HK$93.87
最少: 1
倍數: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 28.8 A 85 mOhms - 25 V, + 25 V 6 V 23 nC - 55 C + 175 C 190 W Enhancement SiC FET
onsemi 碳化矽MOSFET 650V/80MOSICFETG3TO247-3 699庫存量
HK$99.38
HK$54.66
HK$54.58
HK$51.46
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 750V/18MOSICFETG4TO247 657庫存量
HK$114.83
HK$65.92
HK$65.35
最少: 1
倍數: 1
最大: 600
Through Hole TO-247-3 1 Channel 750 V 81 A 23 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 385 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 750V/60MOSICFETG4TO247-4 562庫存量
HK$108.34
HK$60.17
HK$57.54
最少: 1
倍數: 1
Through Hole TO-247-4 1 Channel 750 V 28 A 74 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 155 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 650V/30MOSICFETG3TO220-3 902庫存量
HK$210.93
HK$135.63
最少: 1
倍數: 1
Through Hole TO-220-3 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 5 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 650V/40MOSICFETG3TO247 1,166庫存量
HK$160.37
HK$95.60
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 650 V 54 A 42 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 1200V/40MOSICFETG3TO24 610庫存量
HK$242.57
HK$161.03
最少: 1
倍數: 1
Through Hole TO-247-4 1 Channel 1.2 kV 65 A 45 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 429 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 650V/80MOSICFETG3TO247-4 583庫存量
HK$106.04
HK$59.51
HK$55.24
HK$53.10
最少: 1
倍數: 1
Through Hole TO-247-4 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 1200V/80MOSICFETG3TO24 1,142庫存量
HK$173.94
HK$106.12
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 1.2 kV 33 A 100 mOhms - 25 V, + 25 V 6 V 51 nC - 55 C + 175 C 254.2 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 650V/80MOSICFETG3TO220 475庫存量
HK$98.56
HK$56.80
HK$52.53
HK$48.91
最少: 1
倍數: 1
Through Hole TO-220-3 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 750V/33MOSICFETG4TO263 486庫存量
帶狀裁切
HK$125.03
HK$73.24
HK$69.29
捲
HK$69.29
最少: 1
倍數: 1
: 800
SMD/SMT D2PAK-7 1 Channel 750 V 44 A 41 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 197 W Enhancement SiC FET
onsemi 碳化矽MOSFET 750V/44MOSICFETG4TO263 648庫存量
帶狀裁切
HK$115.33
HK$66.01
HK$62.47
捲
HK$62.47
最少: 1
倍數: 1
: 800
SMD/SMT D2PAK-7 1 Channel 750 V 35.6 A 56 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 181 W Enhancement SiC FET
onsemi 碳化矽MOSFET 1200V/150MOSICFETG3TO2 355庫存量
帶狀裁切
HK$104.97
HK$60.25
HK$55.49
HK$52.53
捲
HK$52.53
最少: 1
倍數: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 17 A 150 mOhms - 25 V, + 25 V 4.4 V 25.7 nC - 55 C + 175 C 136 W Enhancement SiC FET
onsemi 碳化矽MOSFET 1200V/40MOSICFETG3TO24 382庫存量
HK$301.35
HK$224.08
HK$212.57
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 1.2 kV 65 A 45 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 429 W Enhancement AEC-Q101 SiC FET