onsemi NCP5106 and NCP5109 High Voltage Side Drivers provide two outputs for direct drive of two N-channel power MOSFETs or Insulated-Gate Bipolar Transistors (IGBTs) arranged in a half-bridge configuration. These high voltage, high, and low side drivers feature a dV/dt immunity of 50 volts per nanosecond (V/ns) and are 3.3V and 5V input logic compatible. These devices use the bootstrap technique to ensure a proper drive of the High Side power switch and provide a rugged design.
