650V Silicon Carbide (SiC) MOSFETs

onsemi 650V Silicon Carbide (SiC) MOSFETs provide superior switching performance and higher reliability compared to Silicon (Si). These 650V SiC MOSFETs have low ON resistance and a compact chip size to ensure low capacitance and gate charge. Benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.

結果: 29
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 公司名稱
onsemi 碳化矽MOSFET SIC MOS TO247-3L 23MOHM 650V M3S 3,456庫存量
最少: 1
倍數: 1
最大: 900

Through Hole TO-247-3 N-Channel 1 Channel 650 V 40 A 18 mOhms - 8 V, + 22 V 4 V 262 nC - 55 C + 175 C 263 W Enhancement EliteSiC
onsemi 碳化矽MOSFET SIC MOS D2PAK-7L 650V 3,296庫存量
最少: 1
倍數: 1
: 800
SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 145 A 18 mOhms - 8 V, + 22 V 4.3 V 283 nC - 55 C + 175 C 250 W Enhancement EliteSiC
onsemi 碳化矽MOSFET SIC MOS D2PAK-7L 650V 1,282庫存量
最少: 1
倍數: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 106 A 28.5 mOhms - 8 V, + 22 V 4.3 V 164 nC - 55 C + 175 C 395 W Enhancement EliteSiC

onsemi 碳化矽MOSFET SIC MOS TO247-3L 650V 1,782庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 66 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 291 W Enhancement EliteSiC

onsemi 碳化矽MOSFET SIC MOS TO247-3L 650V 509庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 47 A 70 mOhms - 8 V, + 22 V 4.3 V 74 nC - 55 C + 175 C 176 W Enhancement EliteSiC

onsemi 碳化矽MOSFET SIC MOS TO247-4L 650V 776庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 38 A 85 mOhms - 8 V, + 22 V 4.3 V 61 nC - 55 C + 175 C 148 W Enhancement EliteSiC
onsemi 碳化矽MOSFET SIC MOS D2PAK-7L 650V 312庫存量
最少: 1
倍數: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 46 A 70 mOhms - 8 V, + 22 V 4.3 V 74 nC - 55 C + 175 C 170 W Enhancement EliteSiC

onsemi 碳化矽MOSFET SIC MOS TO247-3L 650V 1,046庫存量
最少: 1
倍數: 1
最大: 20

Through Hole TO-247-3 N-Channel 1 Channel 650 V 99 A 28.5 mOhms - 8 V, + 22 V 4.3 V 164 nC - 55 C + 175 C 348 W Enhancement EliteSiC

onsemi 碳化矽MOSFET SIC MOS TO247-4L 650V 1,589庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 55 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 187 W Enhancement EliteSiC

onsemi 碳化矽MOSFET SIC MOS TO247-4L 650V 400庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 33 A 70 mOhms - 18 V, + 18 V 4.3 V 74 nC - 55 C + 175 C 88 W Enhancement EliteSiC
onsemi 碳化矽MOSFET SIC MOS D2PAK-7L 650V 418庫存量
最少: 1
倍數: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 62 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 242 W Enhancement EliteSiC
onsemi 碳化矽MOSFET SIC MOS TOLL 650V 1,364庫存量
最少: 1
倍數: 1
: 2,000

SMD/SMT PSOF-8 N-Channel 1 Channel 650 V 73 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 348 W Enhancement EliteSiC
onsemi 碳化矽MOSFET SIC MOS D2PAK-7L 650V 794庫存量
最少: 1
倍數: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 62 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 121 W Enhancement EliteSiC

onsemi 碳化矽MOSFET SIC MOS TO247-4L 650V 202庫存量
最少: 1
倍數: 1
Through Hole TO-247-4 N-Channel 1 Channel 650 V 142 A 18 mOhms - 8 V, + 22 V 4.3 V 283 nC - 55 C + 150 C 500 W Enhancement EliteSiC
onsemi 碳化矽MOSFET SIC MOS D2PAK-7L 32MOHM 650V M3S 773庫存量
最少: 1
倍數: 1
最大: 20
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 52 A 44 mOhms - 10 V, + 22.6 V 4 V 55 nC - 55 C + 175 C 200 W Enhancement
onsemi 碳化矽MOSFET SIC MOS TO247-4L 32MOHM 650V M3S 604庫存量
最少: 1
倍數: 1
最大: 30

Through Hole TO-247-4 N-Channel 1 Channel 650 V 50 A 44 mOhms - 10 V, + 22.6 V 4 V 55 nC - 55 C + 175 C 187 W Enhancement
onsemi 碳化矽MOSFET SIC MOS TO247-3L 32MOHM 650V M3S 2,751庫存量
最少: 1
倍數: 1
最大: 510

Through Hole TO-247-3 N-Channel 1 Channel 650 V 51 A 44 mOhms - 8 V, + 22 V 4 V 55 nC - 55 C + 175 C 200 W Enhancement
onsemi 碳化矽MOSFET SIC MOS D2PAK-7L 23MOHM 650V M3S 721庫存量
最少: 1
倍數: 1
最大: 10
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 70 A 33 mOhms - 8 V, + 22 V 4 V 69 nC - 55 C + 175 C 263 W Enhancement
onsemi 碳化矽MOSFET SIC MOS D2PAK-7L 32MOHM 650V M3S 800庫存量
最少: 1
倍數: 1
最大: 80
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 52 A 44 mOhms - 8 V, + 22 V 4 V 55 nC - 55 C + 175 C 200 W Enhancement
onsemi 碳化矽MOSFET SIC MOS TO247-4L 23MOHM 650V M3S 400庫存量
最少: 1
倍數: 1
最大: 45

Through Hole TO-247-4 N-Channel 1 Channel 650 V 67 A 33 mOhms - 8 V, + 22 V 4 V 69 nC - 55 C + 175 C 245 W Enhancement
onsemi 碳化矽MOSFET SIC MOS TO247-4L 32MOHM 650V M3S 396庫存量
最少: 1
倍數: 1
最大: 10

Through Hole TO-247-4 N-Channel 1 Channel 650 V 50 A 44 mOhms - 8 V, + 22 V 4 V 55 nC - 55 C + 175 C 187 W Enhancement
onsemi 碳化矽MOSFET SIC MOS TO247-3L 23MOHM 650V M3S 450庫存量
最少: 1
倍數: 1
最大: 45

Through Hole TO-247-3 N-Channel 1 Channel 650 V 70 A 33 mOhms - 8 V, + 22 V 4 V 69 nC - 55 C + 175 C 263 W Enhancement
onsemi 碳化矽MOSFET SIC MOS TO247-4L 650V 422庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 31 A 105 mOhms - 8 V, + 22 V 4.3 V 50 nC - 55 C + 175 C 129 W Enhancement EliteSiC

onsemi 碳化矽MOSFET SIC MOS TO247-4L 650V 449庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 99 A 28.5 mOhms - 8 V, + 22 V 4.3 V 164 nC - 55 C + 175 C 348 W Enhancement EliteSiC

onsemi 碳化矽MOSFET SIC MOS TO247-3L 650V 618庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 163 A 18 mOhms - 8 V, + 22 V 4.3 V 283 nC - 55 C + 175 C 643 W Enhancement EliteSiC