|
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R008M2HXTMA1
- Infineon Technologies
-
1:
HK$317.62
-
1,463庫存量
-
1,000在途量
|
Mouser 元件編號
726-IMBG120R008M2HXT
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1,463庫存量
1,000在途量
|
|
最少: 1
倍數: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
189 A
|
7.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
195 nC
|
- 55 C
|
+ 175 C
|
800 W
|
Enhancement
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R012M2HXTMA1
- Infineon Technologies
-
1:
HK$228.35
-
1,975庫存量
|
Mouser 元件編號
726-IMBG120R012M2HXT
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1,975庫存量
|
|
最少: 1
倍數: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
144 A
|
12.2 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
600 W
|
Enhancement
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R022M2HXTMA1
- Infineon Technologies
-
1:
HK$146.40
-
235庫存量
|
Mouser 元件編號
726-IMBG120R022M2HXT
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
235庫存量
|
|
最少: 1
倍數: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
87 A
|
21.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R026M2HXTMA1
- Infineon Technologies
-
1:
HK$111.22
-
1,589庫存量
|
Mouser 元件編號
726-IMBG120R026M2HXT
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1,589庫存量
|
|
最少: 1
倍數: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
75 A
|
25.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
60 nC
|
- 55 C
|
+ 175 C
|
335 W
|
Enhancement
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R234M2HXTMA1
- Infineon Technologies
-
1:
HK$43.32
-
3,335庫存量
-
2,000在途量
|
Mouser 元件編號
726-IMBG120R234M2HXT
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
3,335庫存量
2,000在途量
|
|
最少: 1
倍數: 1
最大: 1,000
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
8.1 A
|
233.9 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
7.9 nC
|
- 55 C
|
+ 175 C
|
80 W
|
Enhancement
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R040M2HXTMA1
- Infineon Technologies
-
1:
HK$93.79
-
79庫存量
-
1,000預期17/12/2026
|
Mouser 元件編號
726-IMBG120R040M2HXT
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
79庫存量
1,000預期17/12/2026
|
|
最少: 1
倍數: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
52 A
|
39.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
8.1 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R053M2HXTMA1
- Infineon Technologies
-
1:
HK$77.10
-
250庫存量
-
1,000預期19/11/2026
|
Mouser 元件編號
726-IMBG120R053M2HXT
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
250庫存量
1,000預期19/11/2026
|
|
最少: 1
倍數: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
41 A
|
52.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
205 W
|
Enhancement
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R078M2HXTMA1
- Infineon Technologies
-
1:
HK$67.49
-
227庫存量
-
2,000預期3/12/2026
|
Mouser 元件編號
726-IMBG120R078M2HXT
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
227庫存量
2,000預期3/12/2026
|
|
最少: 1
倍數: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
29 A
|
78.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
20.6 nC
|
- 55 C
|
+ 175 C
|
158 W
|
Enhancement
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R181M2HXTMA1
- Infineon Technologies
-
1:
HK$53.10
-
158庫存量
-
4,000在途量
|
Mouser 元件編號
726-IMBG120R181M2HXT
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
158庫存量
4,000在途量
在途量:
2,000 預期7/1/2027
2,000 預期24/6/2027
|
|
最少: 1
倍數: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
14.9 A
|
181.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
9.7 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R017M2HXTMA1
- Infineon Technologies
-
1:
HK$167.03
-
1,999預期19/11/2026
|
Mouser 元件編號
726-IMBG120R017M2HXT
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1,999預期19/11/2026
|
|
最少: 1
倍數: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
107 A
|
17.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
470 W
|
Enhancement
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R116M2HXTMA1
- Infineon Technologies
-
1:
HK$58.69
-
2,000預期10/12/2026
|
Mouser 元件編號
726-IMBG120R116M2HXT
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
2,000預期10/12/2026
|
|
最少: 1
倍數: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
21.2 A
|
115.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
14.4 nC
|
- 55 C
|
+ 175 C
|
123 W
|
Enhancement
|
|