SiC MOSFETs – Mouser Hong Kong

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Automotive-Grade Silicon Carbide Power MOSFETs

STMicroelectronics Automotive-Grade Silicon Carbide Power MOSFETs are developed using ST's advanced and innovative 2nd/3rd generation SiC MOSFET technology. The devices feature low on-resistance per unit area and very good switching performance. The MOSFETs feature a very high operating temperature capability (TJ = 200°C), and a very fast and robust intrinsic body diode.

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Part #

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package

SCT020HU120G3AG
STMicroelectronics
1: HK$187.09
32In Stock
1,200Expected 19/2/2027
New Product

Mfr. Part No.
SCT020HU120G3AG

Mouser Part No
511-SCT020HU120G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package

Learn More

Datasheet

32In Stock

1,200Expected 19/2/2027

Cut Tape

HK$187.09

HK$128.48

HK$118.04

Reel

HK$106.86

MouseReel Available

Min.: 1
Mult.: 1

: 600

SMD/SMT

HU3PAK-7

1 Channel

1.2 kV

100 A

28 mOhms

- 10 V, + 22 V

3 V

121 nC

- 55 C

555 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package

SCT012W90G3-4AG
STMicroelectronics
1: HK$195.64
570In Stock

Mfr. Part No.
SCT012W90G3-4AG

Mouser Part No
511-SCT012W90G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package

Learn More

Datasheet

570In Stock

HK$195.64

HK$116.23

Quote

Min.: 1
Mult.: 1

Through Hole

HiP247-3

1 Channel

900 V

110 A

15.8 mOhms

- 10 V, + 22 V

3.1 V

138 nC

- 55 C

+ 200 C

625 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package

SCT015W120G3-4AG
STMicroelectronics
1: HK$218.08
524In Stock

Mfr. Part No.
SCT015W120G3-4AG

Mouser Part No
511-SCT015W120G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package

Learn More

Datasheet

524In Stock

HK$218.08

HK$136.37

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

1 Channel

1.2 kV

129 A

15 mOhms

- 18 V, + 18 V

4.2 V

167 nC

- 55 C

+ 200 C

673 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package

SCT020W120G3-4AG
STMicroelectronics
1: HK$166.29
246In Stock
600Expected 23/7/2027

Mfr. Part No.
SCT020W120G3-4AG

Mouser Part No
511-SCT020W120G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package

Learn More

Datasheet

246In Stock

600Expected 23/7/2027

HK$166.29

HK$100.12

Min.: 1
Mult.: 1

Through Hole

Hip247-4

1 Channel

1.2 kV

100 A

28 mOhms

- 10 V, + 22 V

3 V

121 nC

- 55 C

+ 200 C

541 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package

SCT040H120G3AG
STMicroelectronics
1: HK$112.04
966In Stock

Mfr. Part No.
SCT040H120G3AG

Mouser Part No
511-SCT040H120G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package

Learn More

Datasheet

966In Stock

Cut Tape

HK$112.04

HK$63.71

HK$63.54

Reel

HK$60.09

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

H2PAK-7

1 Channel

1.2 kV

40 A

54 mOhms

- 18 V, + 18 V

4.2 V

54 nC

- 55 C

+ 175 C

300 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package

SCT025W120G3-4AG
STMicroelectronics
1: HK$173.44
13In Stock
1,200On Order

Mfr. Part No.
SCT025W120G3-4AG

Mouser Part No
511-SCT025W120G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package

Learn More

Datasheet

13In Stock

1,200On Order

HK$173.44

HK$119.68

HK$109.24

HK$100.45

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

1 Channel

1.2 kV

56 A

37 mOhms

- 18 V, + 18 V

4.2 V

73 nC

- 55 C

+ 200 C

388 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package

SCT025W120G3AG
STMicroelectronics
1: HK$155.77
47In Stock
600Expected 14/5/2027

Mfr. Part No.
SCT025W120G3AG

Mouser Part No
511-SCT025W120G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package

Learn More

Datasheet

47In Stock

600Expected 14/5/2027

HK$155.77

HK$96.91

HK$90.91

Min.: 1
Mult.: 1

Through Hole

HiP247-3

1 Channel

1.2 kV

56 A

37 mOhms

- 10 V, + 22 V

3 V

73 nC

- 55 C

+ 200 C

388 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package

SCT040W120G3AG
STMicroelectronics
1: HK$114.18
16In Stock
600Expected 14/5/2027

Mfr. Part No.
SCT040W120G3AG

Mouser Part No
511-SCT040W120G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package

Learn More

Datasheet

16In Stock

600Expected 14/5/2027

HK$114.18

HK$80.23

HK$61.24

Min.: 1
Mult.: 1

Through Hole

HiP-247-3

1 Channel

1.2 kV

40 A

54 mOhms

- 18 V, + 18 V

4.2 V

56 nC

- 55 C

+ 200 C

312 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H

SCTW40N120G2VAG
STMicroelectronics
1: HK$165.80
5In Stock
600Expected 19/2/2027

Mfr. Part No.
SCTW40N120G2VAG

Mouser Part No
511-SCTW40N120G2VAG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H

Learn More

Datasheet

5In Stock

600Expected 19/2/2027

HK$165.80

HK$88.78

Min.: 1
Mult.: 1

Through Hole

HiP-247-3

1 Channel

1.2 kV

36 A

100 mOhms

- 10 V, + 22 V

4.9 V

61 nC

- 55 C

+ 200 C

278 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package

SCT011HU75G3AG
STMicroelectronics
1: HK$225.80
1,200On Order
New Product

Mfr. Part No.
SCT011HU75G3AG

Mouser Part No
511-SCT011HU75G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package

Learn More

Datasheet

1,200On Order

Cut Tape

HK$225.80

HK$169.66

HK$155.77

Reel

HK$143.03

MouseReel Available

Min.: 1
Mult.: 1

: 600

SMD/SMT

HU3PAK-7

1 Channel

750 V

110 A

15 mOhms

- 10 V, + 22 V

3.2 V

154 nC

- 55 C

+ 175 C

652 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package

SCT016H120G3AG
STMicroelectronics
1: HK$212.08
1,985On Order
New Product

Mfr. Part No.
SCT016H120G3AG

Mouser Part No
511-SCT016H120G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package

Learn More

Datasheet

1,985On Order

Cut Tape

HK$212.08

HK$145.41

HK$141.55

Reel

HK$131.03

MouseReel Available

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

H2PAK-7

1 Channel

1.2 kV

112 A

22 mOhms

- 10 V, + 22 V

3 V

150 nC

- 55 C

+ 175 C

652 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package

SCT025H120G3AG
STMicroelectronics
1: HK$150.92
1,997Expected 20/8/2027

Mfr. Part No.
SCT025H120G3AG

Mouser Part No
511-SCT025H120G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package

Learn More

Datasheet

1,997Expected 20/8/2027

Cut Tape

HK$150.92

HK$93.46

HK$92.97

Reel

HK$88.45

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

H2PAK-7

1 Channel

1.2 kV

55 A

37 mOhms

- 10 V, + 22 V

3 V

73 nC

- 55 C

+ 175 C

375 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package

SCT012H90G3AG
STMicroelectronics
1: HK$191.77
998Expected 29/1/2027

Mfr. Part No.
SCT012H90G3AG

Mouser Part No
511-SCT012H90G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package

Learn More

Datasheet

998Expected 29/1/2027

Cut Tape

HK$191.77

HK$124.94

HK$124.70

HK$117.30

Reel

HK$111.55

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

H2PAK-7

1 Channel

900 V

110 A

12 mOhms

- 18 V, + 18 V

4.2 V

138 nC

- 55 C

+ 175 C

625 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package

SCT040HU120G3AG
STMicroelectronics
1: HK$135.55
1,200Expected 12/3/2027
New Product

Mfr. Part No.
SCT040HU120G3AG

Mouser Part No
511-SCT040HU120G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package

Learn More

Datasheet

1,200Expected 12/3/2027

Cut Tape

HK$135.55

HK$86.80

HK$76.28

Reel

HK$64.86

MouseReel Available

Min.: 1
Mult.: 1

: 600

SMD/SMT

HU3PAK-7

1 Channel

1.2 kV

40 A

72 mOhms

- 10 V, + 22 V

3 V

54 nC

- 55 C

+ 175 C

300 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A

SCT040HU65G3AG
STMicroelectronics
1: HK$112.29
592Expected 8/10/2027

Mfr. Part No.
SCT040HU65G3AG

Mouser Part No
511-SCT040HU65G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A

Learn More

Datasheet

592Expected 8/10/2027

Cut Tape

HK$112.29

HK$85.57

HK$71.27

Reel

HK$63.54

HK$60.09

MouseReel Available

Min.: 1
Mult.: 1

: 600

SMD/SMT

H2PAK-2

1 Channel

650 V

7 A

40 mOhms

- 30 V, + 30 V

5 V

36 nC

- 55 C

+ 150 C

266 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A

SCT055HU65G3AG
STMicroelectronics
1: HK$111.22
1,800On Order

Mfr. Part No.
SCT055HU65G3AG

Mouser Part No
511-SCT055HU65G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A

Learn More

Datasheet

1,800On Order

Cut Tape

HK$111.22

HK$71.84

HK$65.51

Reel

HK$59.51

MouseReel Available

Min.: 1
Mult.: 1

: 600

SMD/SMT

HU3PAK-7

1 Channel

650 V

30 A

72 mOhms

- 10 V, + 22 V

4.2 V

29 nC

- 55 C

+ 175 C

185 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package

SCT070HU120G3AG
STMicroelectronics
1: HK$120.59
599Expected 11/11/2026

Mfr. Part No.
SCT070HU120G3AG

Mouser Part No
511-SCT070HU120G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package

Learn More

Datasheet

599Expected 11/11/2026

Cut Tape

HK$120.59

HK$82.78

HK$72.91

Reel

HK$65.76

Min.: 1
Mult.: 1

: 600

SMD/SMT

HU3PAK-7

1 Channel

1.2 kV

30 A

87 mOhms

- 18 V, + 18 V

4.2 V

37 nC

- 55 C

+ 175 C

223 W

Enhancement

AEC-Q101

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package

SCT040W120G3-4
STMicroelectronics
1: HK$110.31
100On Order

Mfr. Part No.
SCT040W120G3-4

Mouser Part No
511-SCT040W120G3-4

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package

Learn More

Datasheet

100On Order

HK$110.31

HK$72.66

HK$63.71

HK$54.33

Min.: 1
Mult.: 1

Through Hole

HiP247-4

1 Channel

1.2 kV

40 A

54 mOhms

- 10 V, + 22 V

3.1 V

56 nC

- 55 C

+ 200 C

312 W

Enhancement

AEC-Q101

Automotive-Grade Silicon Carbide Power MOSFETs

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