EF High Voltage Power MOSFETs

Vishay / Siliconix EF High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.

結果: 31
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 封裝
Vishay / Siliconix MOSFET EF Series Pwr MOSFET w/Fast Body Diode 7,408庫存量
HK$42.00
HK$21.78
HK$19.81
HK$16.36
HK$16.28
最少: 1
倍數: 1
Si SMD/SMT N-Channel 1 Channel 600 V 29 A 102 mOhms 30 V 5 V 35 nC - 55 C + 150 C 208 W Enhancement Bulk
Vishay / Siliconix MOSFET Nch 600V Vds 30V Vgs TO-220; w/diode 1,012庫存量
HK$38.88
HK$20.06
HK$18.17
HK$14.96
HK$14.88
最少: 1
倍數: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 19 A 182 mOhms 30 V 2 V 96 nC - 55 C + 150 C 33 W Enhancement Tube
Vishay / Siliconix MOSFET Nch 600V Vds 30V Vgs TO-263; w/diode 1,695庫存量
HK$42.50
HK$27.87
HK$20.80
HK$17.43
最少: 1
倍數: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 19 A 182 mOhms 30 V 2 V 96 nC - 55 C + 150 C 179 W Enhancement Tube
Vishay / Siliconix MOSFET EF Series Pwr MOSFET w/Fast Body Diode 461庫存量
HK$69.46
HK$37.73
HK$34.69
HK$29.18
最少: 1
倍數: 1
Si Through Hole N-Channel 1 Channel 600 V 48 A 52 mOhms 30 V 5 V 67 nC - 55 C + 150 C 278 W Enhancement Bulk
Vishay / Siliconix MOSFET TO247 800V 20A N-CH MOSFET 1,387庫存量
HK$50.22
HK$26.47
HK$24.17
HK$23.26
最少: 1
倍數: 1
Si Through Hole TO-247AC-3 N-Channel 1 Channel 800 V 20 A 170 mOhms 30 V 4 V 60 nC - 55 C + 150 C 208 W Enhancement Tube
Vishay / Siliconix MOSFET TO220 600V 8.4A N-CH MOSFET 1,516庫存量
HK$35.26
HK$22.36
HK$16.69
HK$14.30
最少: 1
倍數: 1
Si Through Hole TO-220FP-3 N-Channel 1 Channel 650 V 8.4 A 193 mOhms 30 V 5 V 32 nC - 55 C + 150 C 156 W Enhancement Tube
Vishay / Siliconix MOSFET EF Series Pwr MOSFET w/Fast Body Diode 2,238庫存量
HK$45.95
HK$24.00
HK$21.87
HK$20.63
最少: 1
倍數: 1
Si Through Hole N-Channel 1 Channel 600 V 29 A 102 mOhms 30 V 5 V 35 nC - 55 C + 150 C 208 W Enhancement Tube
Vishay / Siliconix MOSFET Nch 600V Vds 30V Vgs TO-220AB; w/diode 1,555庫存量
HK$41.59
HK$27.29
HK$20.39
HK$17.10
HK$14.80
最少: 1
倍數: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 19 A 182 mOhms 30 V 2 V 96 nC - 55 C + 150 C 179 W Enhancement Tube
Vishay Semiconductors MOSFET 650V Vds 30V Vgs TO-247AD 409庫存量
HK$129.55
HK$74.80
HK$71.68
最少: 1
倍數: 1
Si Tube

Vishay / Siliconix MOSFET 650V Vds 30V Vgs TO-247AC 289庫存量
HK$135.71
HK$103.41
HK$86.15
HK$77.19
最少: 1
倍數: 1
Si Through Hole TO-247AC-3 Tube
Vishay / Siliconix MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8 2,927庫存量
帶狀裁切
HK$49.16
HK$32.22
HK$23.76
HK$21.13
捲
HK$18.41
最少: 1
倍數: 1
: 3,000
Si SMD/SMT PowerPAK-8x8-4 N-Channel 1 Channel 650 V 11 A 332 mOhms 30 V 4 V 35 nC - 55 C + 150 C 130 W Enhancement Reel, Cut Tape, MouseReel
Vishay / Siliconix MOSFET 650V Vds 30V Vgs D2PAK (TO-263) 835庫存量
HK$61.24
HK$40.20
HK$32.30
HK$29.35
HK$25.81
最少: 1
倍數: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 24 A 156 mOhms 30 V 2 V 122 nC - 55 C + 150 C 250 W Enhancement Tube

Vishay / Siliconix MOSFET 650V Vds 30V Vgs TO-247AC 475庫存量
HK$94.45
HK$62.14
HK$53.35
HK$48.09
最少: 1
倍數: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 46 A 63 mOhms 30 V 4 V 185 nC - 55 C + 150 C 417 W Enhancement Tube
Vishay / Siliconix MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8 2,873庫存量
帶狀裁切
HK$96.67
HK$88.04
HK$64.12
HK$52.03
捲
HK$36.83
最少: 1
倍數: 1
: 3,000
Si SMD/SMT PowerPAK-8x8-4 N-Channel 1 Channel 650 V 23 A 130 mOhms 30 V 4 V 77 nC - 55 C + 150 C 202 W Enhancement Reel, Cut Tape, MouseReel
Vishay / Siliconix MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8 2,996庫存量
帶狀裁切
HK$49.16
HK$25.81
HK$23.59
HK$21.37
HK$20.55
捲
HK$17.43
最少: 1
倍數: 1
: 3,000
Si SMD/SMT PowerPAK-8x8-4 N-Channel 1 Channel 600 V 16 A 220 mOhms 30 V 4 V 41 nC - 55 C + 150 C 147 W Enhancement Reel, Cut Tape, MouseReel
Vishay / Siliconix MOSFET 650V Vds 30V Vgs TO-220AB 925庫存量
HK$51.87
HK$34.03
HK$25.07
HK$22.28
最少: 1
倍數: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 21 A 180 mOhms 30 V 4 V 71 nC - 55 C + 150 C 208 W Enhancement Tube

Vishay / Siliconix MOSFET 650V Vds 30V Vgs TO-247AC 440庫存量
HK$62.55
HK$41.84
HK$33.70
HK$28.44
最少: 1
倍數: 1
Si Through Hole TO-247AC-3 Tube
Vishay / Siliconix MOSFET EF Series Pwr MOSFET w/Fast Body Diode 924庫存量
HK$65.60
HK$35.43
HK$33.21
HK$29.84
最少: 1
倍數: 1
Si Through Hole N-Channel 1 Channel 600 V 48 A 52 mOhms 30 V 5 V 67 nC - 55 C + 150 C 278 W Enhancement Tube
Vishay / Siliconix MOSFET TO220 800V 20A N-CH MOSFET 1,620庫存量
HK$44.06
HK$22.93
HK$20.88
HK$17.51
最少: 1
倍數: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 20 A 170 mOhms 30 V 4 V 60 nC - 55 C + 150 C 208 W Enhancement Tube
Vishay / Siliconix MOSFET TO247 600V 8.4A N-CH MOSFET 332庫存量
HK$39.13
HK$20.14
HK$15.04
最少: 1
倍數: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 8.4 A 168 mOhms 30 V 5 V 32 nC - 55 C + 150 C 156 W Enhancement Tube
Vishay / Siliconix MOSFET 650V Vds; 30V Vgs TO-247AC 59庫存量
HK$145.49
HK$84.99
HK$84.50
最少: 1
倍數: 1
Si Through Hole TO-247AC-3 N-Channel 1 Channel 600 V 80 A 32 mOhms 30 V 2 V 400 nC - 55 C + 150 C 520 W Enhancement Tube
Vishay / Siliconix MOSFET TO263 600V 8.4A N-CH MOSFET
953預期2/11/2026
HK$35.26
HK$18.74
HK$17.02
HK$13.97
最少: 1
倍數: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 8.4 A 168 mOhms 30 V 5 V 32 nC - 55 C + 150 C 156 W Enhancement Tube
Vishay / Siliconix MOSFET Nch 600V Vds 30V Vgs TO-247AC; w/diode 500現貨供應
HK$26.14
HK$21.54
HK$18.25
最少: 50
倍數: 50
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 19 A 182 mOhms 30 V 2 V 96 nC - 55 C + 150 C 179 W Enhancement Tube
Vishay / Siliconix MOSFET N-CHANNEL 600V
5,000現貨供應
HK$16.44
HK$13.65
HK$12.58
最少: 100
倍數: 100
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 21 A 176 mOhms 30 V 4 V 84 nC - 55 C + 150 C 227 W Enhancement Bulk
Vishay / Siliconix MOSFET 650V Vds 30V Vgs TO-220 FULLPAK 無庫存前置作業時間 30 週
HK$24.82
最少: 1,000
倍數: 1,000
Si Through Hole TO-220-3 N-Channel 1 Channel 700 V 24 A 156 mOhms 30 V 4 V 81 nC - 55 C + 150 C 39 W Enhancement Tube