|
|
碳化矽MOSFET SIC_DISCRETE
- AIMW120R045M1XKSA1
- Infineon Technologies
-
1:
HK$180.51
-
712庫存量
-
NRND
|
Mouser 元件編號
726-AIMW120R045M1XKS
NRND
|
Infineon Technologies
|
碳化矽MOSFET SIC_DISCRETE
|
|
712庫存量
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
1.2 kV
|
52 A
|
59 mOhms
|
- 7 V, + 20 V
|
5.7 V
|
57 nC
|
- 55 C
|
+ 175 C
|
228 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
-
1:
HK$120.18
-
1,701庫存量
-
NRND
|
Mouser 元件編號
726-IMW65R027M1HXKSA
NRND
|
Infineon Technologies
|
碳化矽MOSFET SILICON CARBIDE MOSFET
|
|
1,701庫存量
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
650 V
|
47 A
|
34 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
62 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
-
1:
HK$85.57
-
298庫存量
-
NRND
|
Mouser 元件編號
726-IMZA65R048M1HXKS
NRND
|
Infineon Technologies
|
碳化矽MOSFET SILICON CARBIDE MOSFET
|
|
298庫存量
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
650 V
|
39 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R1K0M1XTMA1
- Infineon Technologies
-
1:
HK$49.73
-
24,949在途量
|
Mouser 元件編號
726-IMBF170R1K0M1XTM
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
|
|
24,949在途量
|
|
最少: 1
倍數: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.7 kV
|
5.2 A
|
1 Ohms
|
- 10 V, + 20 V
|
4.5 V
|
5 nC
|
- 55 C
|
+ 175 C
|
68 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R030M1HXKSA1
- Infineon Technologies
-
1:
HK$152.40
-
1,660在途量
-
NRND
|
Mouser 元件編號
726-IMZ120R030M1HXKS
NRND
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
1,660在途量
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
56 A
|
40 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
63 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R140M1HXKSA1
- Infineon Technologies
-
1:
HK$68.06
-
978在途量
-
NRND
|
Mouser 元件編號
726-IMW120R140M1HXKS
NRND
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
978在途量
在途量:
18 預期5/11/2026
480 預期11/10/2027
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
1.2 kV
|
19 A
|
182 mOhms
|
- 7 V, + 23 V
|
3.5 V
|
13 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET SILICON CARBIDE MOSFET
- IMZA65R072M1HXKSA1
- Infineon Technologies
-
1:
HK$72.01
-
無庫存前置作業時間 52 週
-
NRND
|
Mouser 元件編號
726-IMZA65R072M1HXKS
NRND
|
Infineon Technologies
|
碳化矽MOSFET SILICON CARBIDE MOSFET
|
|
無庫存前置作業時間 52 週
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
650 V
|
28 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
|
|