Vishay 碳化矽MOSFET

結果: 18
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 公司名稱
Vishay Semiconductors 碳化矽MOSFET 1200-V N-CHANNEL (SIC) MOSFET 2,313庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 29 A 100 mOhms - 10 V, + 22 V 2.69 V 47.3 nC - 55 C + 150 C 139 W Enhancement MaxSIC
Vishay Semiconductors 碳化矽MOSFET 1200-V N-CHANNEL SIC MOSFET
800預期25/6/2026
最少: 1
倍數: 1
SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 52 A 56 mOhms - 10 V, 22 V 2.8 V 82 nC - 55 C + 175 C 268 W Enhancement
Vishay Semiconductors 碳化矽MOSFET 1200-V N-CHANNEL SIC MOSFET
600預期18/6/2026
最少: 1
倍數: 1
Through Hole TO-247AD-4 N-Channel 1 Channel 1.2 kV 51 A 56 mOhms - 10 V, 22 V 2.8 V 83 nC - 55 C + 175 C 254 W Enhancement
Vishay Semiconductors 碳化矽MOSFET 1200-V N-CHANNEL SIC MOSFET
600預期18/6/2026
最少: 1
倍數: 1
Through Hole TO-247AD-3 N-Channel 1 Channel 1.2 kV 51 A 56 mOhms - 10 V, 22 V 2.8 V 84 nC - 55 C + 175 C 254 W Enhancement
Vishay Semiconductors 碳化矽MOSFET 1200-V N-CHANNEL SIC MOSFET
800預期20/11/2026
最少: 1
倍數: 1
SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 41 A 79 mOhms - 10 V, 22 V 2.9 V 58 nC - 55 C + 175 C 221 W Enhancement
Vishay Semiconductors 碳化矽MOSFET 1200-V N-CHANNEL SIC MOSFET
600預期20/11/2026
最少: 1
倍數: 1
Through Hole TO-247AD-4 N-Channel 1 Channel 1.2 kV 39 A 79 mOhms - 10 V, 22 V 2.9 V 61 nC - 55 C + 175 C 205 W Enhancement
Vishay Semiconductors 碳化矽MOSFET 1200-V N-CHANNEL SIC MOSFET
800預期20/11/2026
最少: 1
倍數: 1
SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 32 A 100 mOhms - 10 V, 22 V 2.9 V 47 nC - 55 C + 175 C 185 W Enhancement
Vishay Semiconductors 碳化矽MOSFET 1200-V N-CHANNEL SIC MOSFET
600預期20/11/2026
最少: 1
倍數: 1
Through Hole TO-247AD-4 N-Channel 1 Channel 1.2 kV 31 A 100 mOhms - 10 V, 22 V 2.9 V 45 nC - 55 C + 175 C 174 W Enhancement
Vishay Semiconductors 碳化矽MOSFET 1200-V N-CHANNEL SIC MOSFET
800預期25/6/2026
最少: 1
倍數: 1
SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 52 A 56 mOhms - 10 V, 22 V 2.8 V 82 nC - 55 C + 175 C 268 W Enhancement
Vishay Semiconductors 碳化矽MOSFET 1200-V N-CHANNEL SIC MOSFET
600預期25/6/2026
最少: 1
倍數: 1
Through Hole TO-247AD-4 N-Channel 1 Channel 1.2 kV 51 A 56 mOhms - 10 V, 22 V 2.8 V 83 nC - 55 C + 175 C 254 W Enhancement
Vishay Semiconductors 碳化矽MOSFET 1200-V N-CHANNEL SIC MOSFET
600預期17/9/2026
最少: 1
倍數: 1
Through Hole TO-247AD-4 N-Channel 1 Channel 1.2 kV 39 A 79 mOhms - 10 V, 22 V 2.9 V 61 nC - 55 C + 175 C 205 W Enhancement
Vishay Semiconductors 碳化矽MOSFET 1200-V N-CHANNEL SIC MOSFET
600預期17/9/2026
最少: 1
倍數: 1
Through Hole TO-247AD-4 N-Channel 1 Channel 1.2 kV 39 A 79 mOhms - 10 V, 22 V 2.9 V 61 nC - 55 C + 175 C 205 W Enhancement
Vishay Semiconductors 碳化矽MOSFET 1200-V N-CHANNEL SIC MOSFET 無庫存前置作業時間 57 週
最少: 1
倍數: 1

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 49 A 56 mOhms - 10 V, 22 V 2.38 V 75.6 nC - 55 C + 150 C 212 W Enhancement
Vishay Semiconductors 碳化矽MOSFET 1200-V N-CHANNEL SIC MOSFET 無庫存前置作業時間 57 週
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 49 A 56 mOhms - 10 V, + 22 V 2.38 V 75.6 nC - 55 C + 150 C 227 W Enhancement MaxSIC
Vishay Semiconductors 碳化矽MOSFET 1200-V N-CHANNEL SIC MOSFET 無庫存前置作業時間 57 週
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 49 A 56 mOhms - 10 V, + 22 V 2.38 V 75.6 nC - 55 C + 150 C 227 W Enhancement MaxSIC
Vishay Semiconductors 碳化矽MOSFET 1200-V N-CHANNEL SIC MOSFET 無庫存前置作業時間 57 週
最少: 1
倍數: 1

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 30 A 100 mOhms - 10 V, 22 V 2.69 V 47.3 nC - 55 C + 150 C 140 W Enhancement
Vishay Semiconductors 碳化矽MOSFET 1200-V N-CHANNEL SIC MOSFET 無庫存前置作業時間 57 週
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 10.5 A 313 mOhms - 10 V, + 22 V 3.1 V 20.3 nC - 55 C + 150 C 56 W Enhancement MaxSIC
Vishay Semiconductors 碳化矽MOSFET 1200-V N-CHANNEL SIC MOSFET 暫無庫存
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 10.5 A 313 mOhms - 10 V, + 22 V 3.1 V 20.3 nC - 55 C + 150 C 56 W Enhancement MaxSIC