HiPerFET and MOSFET Power Devices

IXYS HiPerFET and MOSFET Power Devices are available in the SMPD package, which is much lighter (typically by 50%) than comparable conventional power modules. This enables the designer to create lower-weight power systems. Due to its compact and ultra-low profile package, it is possible to use the same heat sink for multiple devices, which saves PCB space. An added benefit of being smaller and lighter is that it provides better protection against vibrations and g-forces, especially if used in portable appliances. This benefit also increases the life expectancy and reliability of the devices.

結果: 10
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 公司名稱 封裝
IXYS MOSFET Polar3 HiPerFET Power MOSFET 無庫存前置作業時間 44 週
最少: 300
倍數: 20
Si SMD/SMT SMPD-24 N-Channel 500 V 63 A 43 mOhms HiPerFET Tube
IXYS MOSFET SMPD MOSFET Power Device 無庫存前置作業時間 25 週
最少: 300
倍數: 20

Si SMD/SMT SMPD-24 N-Channel 1 Channel 300 V 102 A 20 mOhms - 20 V, 20 V 3 V 376 nC - 55 C + 150 C 570 W Enhancement HiPerFET Tube
IXYS MOSFET SMPD MOSFET Power Device 無庫存前置作業時間 25 週
最少: 300
倍數: 20

Si SMD/SMT SMPD-24 N-Channel 1 Channel 250 V 130 A 13 mOhms - 20 V, 20 V 3 V 364 nC - 55 C + 150 C 570 W Enhancement HiPerFET Tube
IXYS MOSFET SMPD MOSFET Power Device 無庫存前置作業時間 25 週
最少: 300
倍數: 20

Si SMD/SMT SMPD-24 N-Channel 200 V 156 A 8.3 mOhms HiPerFET Tube
IXYS MOSFET SMPD MOSFET Power Device 無庫存前置作業時間 25 週
最少: 300
倍數: 20

Si SMD/SMT SMPD-24 N-Channel 150 V 235 A 4.4 mOhms - 20 V, 20 V 5 V 715 nC - 55 C + 175 C 680 W Enhancement HiPerFET Tube
IXYS MOSFET SMPD MOSFET Power Device 無庫存前置作業時間 46 週
最少: 300
倍數: 20

Si SMD/SMT SMPD-24 N-Channel 1.1 kV 24 A 290 mOhms HiPerFET Tube
IXYS MOSFET SMPD MOSFET Power Device 無庫存前置作業時間 24 週
最少: 1
倍數: 1

Si SMD/SMT SMPD-24 N-Channel 1 Channel 100 V 334 A 2.6 mOhms - 20 V, 20 V 2.5 V 670 nC - 55 C + 175 C 680 W Enhancement HiPerFET Tube
IXYS MOSFET HiperFET Pwr MOSFET Q3-Class 無庫存前置作業時間 46 週
最少: 300
倍數: 20

Si SMD/SMT SMPD-24 N-Channel 1 kV 30 A 245 mOhms - 30 V, 30 V 264 nC - 55 C + 150 C HiPerFET Tube
IXYS MOSFET SMPD MOSFET Power Device 無庫存前置作業時間 25 週
最少: 300
倍數: 20

Si SMD/SMT SMPD-24 N-Channel 1 Channel 55 V 550 A 1.3 mOhms - 20 V, 20 V 3.8 V 595 nC - 55 C + 175 C 830 W Enhancement HiPerFET Tube
IXYS MOSFET 40V 600A 無庫存前置作業時間 25 週
最少: 300
倍數: 20

Si SMD/SMT SMPD-24 N-Channel 1 Channel 40 V 600 A 1.3 mOhms - 20 V, 20 V 1.5 V 590 nC - 55 C + 175 C 830 W Enhancement HiPerFET Tube