4th Generation N-Channel SiC Power MOSFETs

ROHM Semiconductor 4th Generation N-Channel Silicon-Carbide (SiC) Power MOSFETs provide low on-resistances with improvements in the short-circuit withstand time. The 4th Generation SiC MOSFETs are easy to parallel and simple to drive. The MOSFETs feature fast switching speeds/reverse recovery, low switching losses, and a +175°C maximum operating temperature. The ROHM 4th Generation N-Channel SSiC Power MOSFETs support a 15V gate-source voltage that contributes to device power savings.

結果: 4
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說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。
數量 RoHS ECAD模型 技術
安裝風格
封裝/外殼
晶體管極性
通道數
Vds - 漏-源擊穿電壓
Id - C連續漏極電流
Rds On - 漏-源電阻
Vgs - 閘極-源極電壓
Vgs th - 門源門限電壓
Qg - 閘極充電
最低工作溫度
最高工作溫度
Pd - 功率消耗
通道模式
封裝
ROHM Semiconductor MOSFET HSOP8 100V 33A P CHAN
規格書
2,433庫存量
最少： 1
倍數： 1
捲: 2,500

Si SMD/SMT HSOP-8 P-Channel 1 Channel 100 V 33 A 34 mOhms - 20 V, 20 V 2.5 V 125 nC - 55 C + 150 C 40 W Enhancement Reel, Cut Tape
ROHM Semiconductor MOSFET Transistor, MOSFET Pch, -100V(Vdss), -2.0A(Id), (4.5V, 6.0V Drive)
規格書
4,215庫存量
最少： 1
倍數： 1
捲: 3,000

Si SMD/SMT SOT-457T-6 P-Channel 1 Channel 100 V 2 A 220 mOhms - 20 V, 20 V 2.5 V 24 nC - 55 C + 150 C 1.25 W Enhancement Reel, Cut Tape
ROHM Semiconductor MOSFET 40V 5.0A/3.5A Dual Nch+Pch, DFN2020-8D, Power MOSFET
規格書
2,130庫存量
最少： 1
倍數： 1
捲: 3,000

Si SMD/SMT DFN-8 N-Channel, P-Channel 2 Channel 40 V 5 A, 3.5 A 48 mOhms, 122 mOhms - 20 V, 20 V 2.5 V 3.5 nC, 6.2 nC - 55 C + 150 C 2 W Enhancement Reel, Cut Tape
ROHM Semiconductor MOSFET 60V 3.5A/2.5A Dual Nch+Pch, DFN2020-8D, Power MOSFET
規格書
2,880庫存量
最少： 1
倍數： 1
捲: 3,000

Si SMD/SMT DFN-8 N-Channel, P-Channel 2 Channel 60 V 3.5 A, 2.5 A 95 mOhms, 280 mOhms - 20 V, 20 V 2.5 V 3.1 nC, 6.3 nC - 55 C + 150 C 2 W Enhancement Reel, Cut Tape