80V N-Channel U-MOS X-H MOSFETs

Toshiba 80V N-Channel U-MOS X-H MOSFETs provide high-speed switching, a small gate charge, and low power dissipation. The U-MOS X-H MOSFETs offer an excellent drain-source on-resistance (RDS(ON)) x transmission resistance x input capacitance (Ciss) value leading to high conductivity and low gate driver losses. The reduced output capacitance (COSS) lowers the output charge (QOSS), increasing the switching efficiency of these devices. These MOSFETs are suitable for switching voltage regulators, motor drivers, and high-efficiency DC-DC converters.

結果: 11
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 封裝
Toshiba MOSFET UMOS10 TO-220AB 80V 2.4mohm 894庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 120 A 2.44 mOhms - 20 V, 20 V 3.5 V 178 nC + 175 C 300 W Enhancement Tube
Toshiba MOSFET UMOS10 TO-220AB 80V 5.3mohm 5,464庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 120 A 5.3 mOhms - 20 V, 20 V 3.5 V 55 nC + 175 C 150 W Enhancement Tube
Toshiba MOSFET UMOS10 TO-220SIS 80V 5.1mohm 193庫存量
最少: 1
倍數: 1

Si Through Hole TO-220SIS-3 N-Channel 1 Channel 80 V 70 A 5.1 mOhms - 20 V, 20 V 3.5 V 54 nC + 175 C 45 W Enhancement Tube
Toshiba MOSFET UMOS10 TO-220SIS 80V 6.8mohm 378庫存量
最少: 1
倍數: 1

Si Through Hole TO-220SIS-3 N-Channel 1 Channel 80 V 58 A 6.8 mOhms - 20 V, 20 V 3.5 V 39 nC + 175 C 41 W Enhancement Tube
Toshiba MOSFET UMOS10 TO-220AB 80V 7mohm 435庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 64 A 7 mOhms - 20 V, 20 V 3.5 V 39 nC + 175 C 87 W Enhancement Tube
Toshiba MOSFET UMOS10 DPAK 80V 5.1mohm
4,935預期16/11/2026
最少: 1
倍數: 1
: 2,500

Si SMD/SMT DPAK-2 (TO-252-2) N-Channel 1 Channel 80 V 84 A 5.1 mOhms - 20 V, 20 V 3.5 V 56 nC + 175 C 104 W Enhancement Reel, Cut Tape, MouseReel
Toshiba MOSFET UMOS10 DPAK 80V 6.9mohm
9,979預期17/8/2026
最少: 1
倍數: 1
: 2,500

Si SMD/SMT DPAK-2 (TO-252-2) N-Channel 1 Channel 80 V 62 A 6.9 mOhms - 20 V, 20 V 3.5 V 39 nC + 175 C 89 W Enhancement Reel, Cut Tape, MouseReel
Toshiba MOSFET 100V U-MOS X-H SOP-Advance(N) 3.1mohm
10,000預期14/12/2026
最少: 1
倍數: 1
: 5,000

Si SMD/SMT SOP-8 N-Channel 1 Channel 100 V 120 A 3.1 mOhms - 20 V, 20 V 2.5 V 83 nC - 55 C + 175 C 210 W Enhancement Reel, Cut Tape, MouseReel
Toshiba MOSFET UMOS10 TO-220SIS 80V 3.2mohm
50預期16/11/2026
最少: 1
倍數: 1

Si Through Hole TO-220SIS-3 N-Channel 1 Channel 80 V 92 A 3.2 mOhms - 20 V, 20 V 3.5 V 102 nC + 175 C 45 W Enhancement Tube
Toshiba MOSFET UMOS10 TO-220AB 80V 3.3mohm
900預期28/1/2027
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 120 A 3.3 mOhms - 20 V, 20 V 3.5 V 110 nC + 175 C 230 W Enhancement Tube
Toshiba MOSFET UMOS10 TO-220SIS 80V 2.4mohm 無庫存前置作業時間 16 週
最少: 1
倍數: 1

Si Through Hole TO-220SIS-3 N-Channel 1 Channel 80 V 100 A 2.44 mOhms - 20 V, 20 V 3.5 V 179 nC + 175 C 47 W Enhancement Tube