QPD0060

Qorvo
772-QPD0060
QPD0060

製造商:

說明:
氮化鎵場效應管 DC-3.6GHz GaN 90W 48V

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 54

庫存:
54 可立即送貨
工廠前置作業時間:
18 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
此產品免費航運

Pricing (HKD)

數量 單價
總價
HK$1,073.53 HK$1,073.53
HK$751.47 HK$18,786.75
完整捲(訂購多個100)
HK$646.42 HK$64,642.00

商品屬性 屬性值 選擇屬性
Qorvo
產品類型: 氮化鎵場效應管
RoHS:  
SMD/SMT
DFN-6
48 V
- 40 C
品牌: Qorvo
配置: Single
開發套件: QPD0060PCB4B01
增益: 16.2 dB
最大工作頻率: 3.8 GHz
最低工作頻率: 1.8 GHz
濕度敏感: Yes
輸出功率: 90 W
封裝: Reel
封裝: Cut Tape
產品類型: GaN FETs
系列: QPD0060
原廠包裝數量: 100
子類別: Transistors
技術: GaN
零件號別名: 1131037 QPD0060SR
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所選屬性: 0

USHTS:
8542390090
ECCN:
EAR99

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

GaN Transistor Solutions for Sub 6GHz 5G

Qorvo GaN Transistor Solutions for Sub-6GHz 5G are a broad portfolio of gallium nitride (GaN) discrete transistor products. The devices have varying levels of power, voltage, and frequency ratings in die-level and packaged solutions. Qorvo GaN Transistor Solutions for Sub-6GHz 5G provide high GaN performance plus the convenience of industry-standard packaging. This speeds design, manufacturing, and is backed by industry-leading reliability.