QPD0030

Qorvo
772-QPD0030
QPD0030

製造商:

說明:
氮化鎵場效應管 DC-4GHz 45W GaN 48V

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 68

庫存:
68 可立即送貨
工廠前置作業時間:
16 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
包裝:
完整捲(訂購多個250)
此產品免費航運

Pricing (HKD)

數量 單價
總價
零卷 / MouseReel™
HK$705.36 HK$705.36
HK$684.89 HK$6,848.90
HK$537.83 HK$13,445.75
HK$424.32 HK$42,432.00
完整捲(訂購多個250)
HK$383.63 HK$95,907.50
† HK$55.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。

商品屬性 屬性值 選擇屬性
Qorvo
產品類型: 氮化鎵場效應管
RoHS:  
SMD/SMT
QFN-20
48 V
- 40 C
45 W
品牌: Qorvo
配置: Single
增益: 21.7 dB
最大工作頻率: 4 GHz
最低工作頻率: 0 Hz
濕度敏感: Yes
輸出功率: 45 W
封裝: Reel
封裝: Cut Tape
封裝: MouseReel
產品類型: GaN FETs
系列: QPD0030
原廠包裝數量: 250
子類別: Transistors
技術: GaN
零件號別名: 1132528
每件重量: 9.664 g
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所選屬性: 0

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CNHTS:
8541290000
CAHTS:
8542390000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
5A991.g

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

GaN Transistor Solutions for Sub 6GHz 5G

Qorvo GaN Transistor Solutions for Sub-6GHz 5G are a broad portfolio of gallium nitride (GaN) discrete transistor products. The devices have varying levels of power, voltage, and frequency ratings in die-level and packaged solutions. Qorvo GaN Transistor Solutions for Sub-6GHz 5G provide high GaN performance plus the convenience of industry-standard packaging. This speeds design, manufacturing, and is backed by industry-leading reliability.