Hall Effect ICs

ROHM Semiconductor Hall Effect ICs include unipolar detection, omnipolar detection, bipolar detection, and omnipolar with polarity detection ICs. These ICs feature a low average current of 3.5µA and fully-integrated CMOS logic output circuitry. The integrated dynamic offset cancellation provides high sensitivity, allowing for less precise placement of the permanent magnet. The product is rated at 8kV ESD withstand and rated for -40°C to +85°C operation. The Hall ICs are ideal for a wide range of portable consumer electronics applications including mobile phones, digital cameras, and computers.

結果: 3
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 封裝
ROHM Semiconductor MOSFET HSMT8 N-CH 60V 20A 4,549庫存量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT HSMT-8G N-Channel 1 Channel 60 V 20 A 24.7 mOhms - 20 V, 20 V 2.5 V 7.6 nC - 55 C + 150 C 15 W Enhancement Reel, Cut Tape
ROHM Semiconductor MOSFET DFN 100V 2A DUAL CH 17,338庫存量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT DFN-2020-8D N-Channel, P-Channel 2 Channel 100 V 2 A, 1 A 207 mOhms, 840 mOhms - 20 V, 20 V 2.5 V 2.8 nC, 6.7 nC - 55 C + 150 C 2 W Enhancement Reel, Cut Tape, MouseReel
ROHM Semiconductor MOSFET -100V 1.0A, Dual Pch+Pch, DFN2020-8D, Power MOSFET
5,892在途量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT DFN-2020-8D P-Channel 2 Channel 100 V 1 A 840 mOhms - 20 V, 20 V 2.5 V 6.7 nC - 55 C + 150 C 2 W Enhancement Reel, Cut Tape