PJQ44611AP-AU_R2_002A1

Name: Panjit PJQ44611AP-AU_R2_002A1
Brand: Panjit
SKU: 241-PJQ4461AUR2002A1
Price: 6.17 HKD
Availability: InStock

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請參閱產品規格

Mouser 編號：

241-PJQ4461AUR2002A1

製造商編號：

PJQ44611AP-AU_R2_002A1

製造商：

Panjit

說明：

MOSFET 60V P-Channel Enhancement Mode MOSFET

壽命週期:

新產品:

該製造商的新產品。

規格書:

PJQ44611AP-AU_R2_002A1 規格書 (PDF)

ECAD模型:

下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

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庫存量: 4,260

庫存：: 4,260 可立即送貨

發生意外錯誤了。請稍後再試。
工廠前置作業時間：: 6 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

HK$-.--

總價:

HK$-.--

估計關稅:

包裝:

完整捲（訂購多個5000）

帶狀裁切

MouseReel™ (+HK$55.00)

Pricing (HKD)

數量	單價	總價
零卷 / MouseReel™ ^†
	HK$6.17	HK$6.17
	HK$3.78	HK$37.80
	HK$2.49	HK$249.00
	HK$1.96	HK$980.00
	HK$1.68	HK$1,680.00
	HK$1.55	HK$3,875.00
完整捲（訂購多個5000）
	HK$1.31	HK$6,550.00
	HK$1.23	HK$12,300.00
	HK$1.13	HK$28,250.00

† HK$55.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

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商品屬性	屬性值	選擇屬性
製造商:	Panjit
產品類型:	MOSFET
RoHS:
技術:	Si
安裝風格:	SMD/SMT
封裝/外殼:	DFN3333-8
晶體管極性:	P-Channel
Vds - 漏-源擊穿電壓:	60 V
Id - C連續漏極電流:	13 A
Rds On - 漏-源電阻:	84 mOhms
Vgs - 閘極-源極電壓:	- 20 V, 20 V
Vgs th - 門源門限電壓 :	2.5 V
Qg - 閘極充電:	18 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 175 C
Pd - 功率消耗 :	31 W
通道模式:	Enhancement
資格:	AEC-Q101
封裝:	Reel
封裝:	Cut Tape
封裝:	MouseReel
品牌:	Panjit
配置:	Single
下降時間:	12 ns
產品類型:	MOSFETs
上升時間:	3.1 ns
原廠包裝數量:	5000
子類別:	Transistors
晶體管類型:	1 P-Channel
標準斷開延遲時間:	27 ns
標準開啟延遲時間:	4.9 ns
每件重量:	30 mg

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所選屬性: 0

篩選文檔:

規格書

PJQ44611AP-AU_R2_002A1 規格書 (PDF)

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

60V P-Channel Enhancement Mode MOSFETs

PANJIT 60V P-Channel Enhancement Mode MOSFETs are designed with advanced trench technology to minimize R_DS(ON) while maximizing avalanche ruggedness and space usage while maintaining superior switching performance. The devices feature a 200mA to 16A continuous drain current, a 1.1nC to 22nC gate charge, and 300mW to 50W power dissipation. The MOSFETs include advanced Trench Process technology and are optimized for use as relay drivers and line drivers. With AEC-Q101 qualification options and a high junction temperature of 175°C, the MOSFETs are ideal for automotive design engineers to simplify circuitry while optimizing performances.

60V Automotive P-Channel MOSFETs

PANJIT 60V Automotive P-Channel MOSFETs are designed with advanced trench process technology to minimize R_DS(ON) while maximizing avalanche ruggedness and space usage. With AEC-Q101 qualification and a high junction temperature of +175°C, these MOSFETs are the optimal choice for automotive design engineers who wish to simplify circuitry while optimizing performance. PANJIT’s P-channel MOSFETs can reduce the circuit complexity of power designs. These components are available in a wide range of compact packages, including SOT-23, SOT-23 6L-1, DFN2020B-6L, DFN3333-8L, DFN5060-8L, and TO-252AA.