STW3N170

STMicroelectronics
511-STW3N170
STW3N170

製造商:

說明:
MOSFET N-channel 1700 V, 7 Ohm typ., 2.6 A, PowerMESH Power MOSFET in TO-247 package

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 1,190

庫存:
1,190 可立即送貨
工廠前置作業時間:
18 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$48.09 HK$48.09
HK$36.33 HK$363.30
HK$29.35 HK$2,935.00
HK$26.14 HK$15,684.00
HK$22.36 HK$26,832.00

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: MOSFET
RoHS:  
Si
Through Hole
TO-3PF-3
N-Channel
1 Channel
1.7 kV
2.6 A
13 Ohms
- 30 V, 30 V
3 V
44 nC
- 55 C
+ 150 C
63 W
Enhancement
PowerMESH
Tube
品牌: STMicroelectronics
配置: Single
下降時間: 53 ns
產品類型: MOSFETs
上升時間: 9 ns
系列: STW3N170
原廠包裝數量: 600
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 51 ns
標準開啟延遲時間: 25 ns
每件重量: 7 g
找到產品:
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所選屬性: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

N-Channel PowerMESH Power MOSFETs

STMicroelectronics N-Channel PowerMESH Power MOSFETs are designed with the STMicroelectronics consolidated strip-layout based MESH OVERLAY™ process. This process results in an advanced family of high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the proprietary edge termination structure, gives the lowest RDS(on) per area, unrivaled gate charge, and switching characteristics.

High Voltage IEEE 1500V+ Discrete Semiconductors Transistors