JDV2S41AFS,L3M
影像僅供參考
請參閱產品規格
請參閱產品規格
757-JDV2S41AFSL3M
JDV2S41AFS,L3M
製造商：
說明：
變容二極管 Variable capacitance diode for electronic tuning applications
變容二極管 Variable capacitance diode for electronic tuning applications
壽命週期:
Mouser新產品
供貨情況
-
庫存：
-
0發生意外錯誤了。請稍後再試。
-
在途量:
-
3,236預期22/9/202610,000預期20/11/2026
-
工廠前置作業時間：
-
14週 工廠預計生產時間數量大於所顯示的數量。
Pricing (HKD)
| 數量 | 單價 |
總價
|
|---|---|---|
| HK$14.39 | HK$14.39 | |
| HK$8.88 | HK$88.80 | |
| HK$5.88 | HK$588.00 | |
| HK$4.62 | HK$2,310.00 | |
| HK$3.95 | HK$3,950.00 | |
| HK$3.58 | HK$8,950.00 | |
| HK$3.17 | HK$15,850.00 | |
| HK$3.07 | HK$30,700.00 | |
| HK$2.99 | HK$74,750.00 |
規格書
Application Notes
- Basics of Diodes (Absolute Maximum Ratings and Electrical Characteristics)
- Basics of Diodes (Power Losses and Thermal Design)
- Basics of Diodes (Types and Overview of Diodes)
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Precautions for using Radio-frequency semiconductor devices
Product Catalogs
合規守則
- CNHTS:
- 8541590000
- CAHTS:
- 8541100090
- USHTS:
- 8541100080
- TARIC:
- 8541100000
- ECCN:
- EAR99
原產地分類
- 原產國:
- 泰國
- 封裝原產國:
- 無資料
- 擴散國:
- 無資料
