最新離散半導體 – Mouser 香港

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分離式半導體的類型

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已用篩選:

製造商 = Diodes Incorporated 回到產品標籤以修改您當前的篩選器。

Diodes Incorporated 5.0SMCJ1xCA 5000W Transient Voltage Suppressor

10/31/2025

- High-power TVS diode designed to protect sensitive electronic circuits from voltage spikes.

Diodes Incorporated 2N7002 N-Channel E-Mode Field Effect Transistors

10/31/2025

- Offers fast switching performance with low gate charge and 60V maximum drain-source voltage.

Diodes Incorporated DMTH64M2LPDW Dual N-Channel E-Mode MOSFET

10/31/2025

- Integrates two MOSFETs in a single PowerDI® 5mm x 6mm package with excellent thermal performance.

Diodes Incorporated DMN1057UCA3 N-Channel Enhancement Mode MOSFET

10/21/2025

- Features superior switching performance, ideal for high-efficiency power-management applications.

Diodes Incorporated DTH1006P5 Glass Passivated Fast Recovery Rectifier

10/13/2025

- A 600V peak repetitive reverse voltage (VRRM) rectifier in a thermally efficient PowerDI®5 package.

Diodes Incorporated DXTP80x PNP Bipolar Transistors

09/18/2025

- PNP Bipolar Transistors offer a small form factor, thermally efficient PowerDI 3333-8 package.

Diodes Incorporated DXTN80x NPN Bipolar Transistors

09/17/2025

- Offers a small form factor, thermally efficient PowerDI 3333-8 package, for higher-density products.

Diodes Incorporated TT8M 8A Glass Pasivated Bridge Rectifiers

05/01/2025

- Features a 1000V maximum repetitive peak reverse voltage and an 8A average rectified output current.

Diodes Incorporated DSCxA065LP Silicon Carbide Schottky Diodes

02/20/2025

- Features superior reverse leakage stability at high temperatures in a DFN8080 package.

Diodes Incorporated DXTN69060C 60V NPN Ultra-Low VCE(SAT) Transistors

11/14/2024

- Features a proprietary structure for achieving ultra-low VCE(SAT) performance.

Diodes Incorporated DMT31M8LFVWQ 30V N-Ch Enhancement Mode MOSFETs

10/01/2024

- Provides low on-resistance in a thermally efficient small form factor package.

Diodes Incorporated DMN2992UFA 20V N-Ch Enhancement Mode MOSFET

08/01/2024

- 20V N-Ch MOSFET designed to minimize the RDS(ON), available in an X2-DFN0806-3 package.

Diodes Incorporated DT1042-02SRQ 2-Ch Low Capacitance TVS Diode Array

07/01/2024

- Designed to protect sensitive electronics from ESD damage.

Diodes Incorporated DMWSH120Hx 1200V N-Channel Power MOSFETs

06/24/2024

- Designed to minimize the on-state resistance and maintain excellent switching performance.

Diodes Incorporated SxCMHQ AEC-Q101 Glass Passivated Rectifiers

06/04/2024

- Offers high-current capability and low forward voltage drop.

Diodes Incorporated DESD24VS2SOQ 24V CAN/LIN Bus Protector

06/01/2024

- An ESD and surge protection device packaged in a compact, surface-mount SOT23 package.

Diodes Incorporated DMP3014SFDE 30V P-Ch Enhancement Mode MOSFETs

05/01/2024

- Offers low on-resistance & gate threshold voltage, while maintaining switching performance.

Diodes Incorporated BC53-16PAWQ 80V PNP Medium Power Transistor

05/01/2024

- Available in a compact DFN2020-3 package whose footprint is 50% smaller than an SOT-23 package.

Diodes Incorporated DMT26M0LDG Asymmetrical Dual N-Channel MOSFETs

04/01/2024

- Designed to minimize the on-state resistance [RDS(ON)] yet maintain superior switching performance.

Diodes Incorporated US1NDFQ 1A Surface-Mount Ultra-Fast Rectifier

03/01/2024

- Offers ultra-fast recovery time for high efficiency in general rectification applications.

Diodes Incorporated DESDxxVxS2UTQ Two-Ch Unidirectional TVS Diode

01/01/2024

- Designed to protect sensitive electronics from damage caused by ESD.

Diodes Incorporated DMP68D1LV Dual P-Channel Enhancement Mode MOSFET

01/01/2024

- Offers low on-resistance and input capacitance, while maintaining superior switching performance.

Diodes Incorporated DMWS120H100SM4 1200V N-Channel SiC Power MOSFET

06/02/2023

- Designed to minimize the on-state resistance yet maintain superior switching performance.

Diodes Incorporated DMTH46M7SFVWQ N-Ch Enhancement Mode MOSFET

03/30/2023

- AEC-Q101 qualified MOSFET with Low RDS(ON) that ensures minimum on-state losses.

Diodes Incorporated MJD Automotive Medium Power Transistors

03/21/2023

- Devices are AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities.

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篩選方式：

Vishay SE050N6/SE080N6/SE100N6/SE120N6 SMD Rectifiers

02/10/2026

- These devices are available in a low-profile package with a typical height of only 0.88mm.

Littelfuse CMA160E1600HF單晶閘管

02/06/2026

- High‑performance 160A, 1600V, features a planar passivated chip structure in a PLUS247 package.

TDK-Lambda i1R ORing MOSFET Modules

02/05/2026

- High-efficiency and low-loss power devices designed to replace traditional diodes.

Vishay SE40CLJ Surface-Mount High Voltage Rectifiers

02/03/2026

- Designed for demanding power conversion applications

Diotec Semiconductor BZX84B3V6 SMD Planar Zener Diode

02/03/2026

- Offers a sharp Zener voltage breakdown and a low leakage current.

Vishay SE30CLJ Surface-Mount High Voltage Rectifiers

02/03/2026

- Engineered for robust performance in demanding power conversion applications.

Vishay Power Silicon Carbide Schottky Diodes

02/03/2026

- Delivers exceptional efficiency, ruggedness, and reliability in demanding power‑electronics apps.

Vishay High Current Density/Voltage Schottky Rectifiers

02/03/2026

- Delivers robust performance for demanding power‑conversion applications.

IXYS X4-Class 功率MOSFET

02/02/2026

- Offer low on-state resistance and conduction losses, with improved efficiency.

Qorvo QPD1014A GaN Input Matched Transistors

01/20/2026

- 15W (P3dB), 50Ω input matched discrete GaN-on-SiC HEMTs operating from 30MHz to 1.2GHz.

IXYS DP高壓快速恢復二極體

01/20/2026

- 600V or 1200V Schottky diodes with low reverse leakage current and fast recovery time.

Qorvo QPD1011A GaN Input Matched Transistors

01/19/2026

- 7W (P3dB), 50Ω input matched discrete GaN-on-SiC HEMTs operating from 30MHz to 1.2GHz.

Qorvo QPD1004A GaN Input Matched Transistors

01/19/2026

- 25W, 50Ω input matched discrete GaN on SiC HEMT operates from 30MHz to 1400MHz on a 50V supply rail.

Littelfuse SM15KPA-HRA與SM30KPA-HRA高可靠性二極體

01/13/2026

- Protects I/O interfaces, VCC bus, and other circuits in avionics, aviation, and eVTOL applications.

Littelfuse SP432x-01WTG TVS二極體

01/08/2026

- Provide ultra-low capacitance, bidirectional, and a high level of protection.

onsemi NVBYST0D6N08X 80V N-Channel Power MOSFET

12/26/2025

- This device offers a low QRR and soft recovery body diode in a TCPAK1012 (TopCool) package.

Infineon Technologies OptiMOS™ 6 80V Power MOSFETs

12/23/2025

- Sets industry benchmark performance with a wide portfolio offering.

onsemi NVMFD5877NL Dual N-Channel MOSFET

12/19/2025

- Designed for compact and efficient designs including high thermal performance.

Infineon Technologies CoolSiC™ Automotive 750V G2 MOSFETs

12/19/2025

- Engineered to meet the stringent demands of electric vehicle (EV) applications.

onsemi NxT2023N065M3S EliteSiC MOSFETs

12/04/2025

- Feature low effective output capacitance and ultra-low gate charge.

STMicroelectronics SGT080R70ILB E-Mode PowerGaN Transistor

12/04/2025

- E-Mode PowerGaN transistor designed for high-efficiency power conversion applications.

Infineon Technologies 750V TRENCHSTOP™ IGBT7 H7 Discrete Transistors

12/01/2025

- DTO247 package, replaces multiple lower-current transistors in TO247 packages connected in parallel.

onsemi FDC642P-F085 Small Signal MOSFET

11/25/2025

- Offers a high-performance trench technology for extremely low RDS(on) and fast switching speed.

onsemi NTTFS007P02P8 P-Channel Low/Medium Voltage MOSFET

11/25/2025

- Built using PowerTrench technology for extremely low RDS(on) switching performance and ruggedness.

iDEAL Semiconductor iS20M028S1C SuperQ™ 200V N-Ch Power MOSFETs

11/24/2025

- Designed for SMPS and high-efficiency motor drives in a robust PDFN package measuring 5mm x 6mm.

檢視：1 - 25，共1222項

分離式半導體的類型

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