最新電晶體 – Mouser 香港

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電晶體的類型

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已用篩選:

製造商 = onsemi 回到產品標籤以修改您當前的篩選器。

onsemi NVBYST0D6N08X 80V N-Channel Power MOSFET

12/26/2025

- This device offers a low QRR and soft recovery body diode in a TCPAK1012 (TopCool) package.

onsemi NVMFD5877NL Dual N-Channel MOSFET

12/19/2025

- Designed for compact and efficient designs including high thermal performance.

onsemi NxT2023N065M3S EliteSiC MOSFETs

12/04/2025

- Feature low effective output capacitance and ultra-low gate charge.

onsemi NTTFS007P02P8 P-Channel Low/Medium Voltage MOSFET

11/25/2025

- Built using PowerTrench technology for extremely low RDS(on) switching performance and ruggedness.

onsemi FDC642P-F085 Small Signal MOSFET

11/25/2025

- Offers a high-performance trench technology for extremely low RDS(on) and fast switching speed.

onsemi NVD6824NL Single N-Channel MOSFETs

11/20/2025

- Offer low RDS(on) to minimize conduction losses and high current capability.

onsemi NVD5867NL Single N-Channel Power MOSFET

11/20/2025

- Features 60V drain-to-source voltage, 39mΩ drain-to-source on resistance, and AEC-Q101 qualified.

onsemi AFGB30T65RQDN IGBT

11/19/2025

- Offers a high figure of merit with low conduction and switching losses.

onsemi NVMFS5832NL Single N-Channel Power MOSFET

11/19/2025

- High-performance MOSFET designed for low-voltage applications requiring efficient power switching.

onsemi NVMFS5830NL Single N-Channel Power MOSFET

11/19/2025

- High-efficiency single n-channel power MOSFET designed for demanding power management applications.

onsemi NVNJWS200N031L單N通道功率MOSFET

10/14/2025

- 該設備具備低RDS(on) 與低閘極臨界電壓，並採用可潤濕側邊。

onsemi NTK3139P P-Channel Single Power MOSFET

10/14/2025

- Comes in a package with a 44% smaller footprint and is 38% thinner than an SC-89 package.

onsemi AFGBG70T65SQDC N-Channel Field Stop IV IGBT

10/13/2025

- The device offers optimal performance with both low conduction and switching losses.

onsemi AFGH4L60T120RWx-STD N-Channel Field Stop VII IGBTs

10/13/2025

- The device offers good performance, with low on-state voltage and low switching losses.

onsemi T10 Low/Medium Voltage MOSFETs

10/06/2025

- Single N-channel MOSFETs in 40V and 80V with improved performance and enhanced system efficiency.

onsemi NSBAMXW PNP Bias Resistor Transistors

09/09/2025

- Designed to replace a single device and the related external resistor bias network.

onsemi NSBCMXW NPN Bias Resistor Transistors

09/08/2025

- Designed to replace a single device and the related external resistor bias network.

onsemi NTK3134N Single N-Channel Power MOSFETs

09/08/2025

- Robust 20V, 890mA N-Channel Power MOSFETs optimized for high-efficiency switching applications.

onsemi NxJS3151P Single P-Channel Power MOSFETs

09/04/2025

- Ideal for space-constrained designs where power density and reliability are critical.

onsemi NXH600N10x 3-Level NPC Inverter Modules

08/25/2025

- Power modules in F5BP containing an I-type neutral point clamped three-level inverter.

onsemi NXVF6532M3TG01 650V EliteSiC H-Bridge Power MOSFET

08/08/2025

- Delivers superior efficiency, fast switching, and robust thermal performance.

onsemi NVMFS4C03NWFET1G Single N-Channel Power MOSFET

06/23/2025

- Delivers excellent thermal performance and low RDS(on) in a compact 5mm x 6mm PowerFLAT package.

onsemi NVMFDx 100V Dual N-Channel Power MOSFETs

06/09/2025

- Features low RDS(on) values and fast switching characteristics in a space-saving DFN-8 package.

onsemi NXH015F120M3F1PTG Silicon Carbide (SiC) Module

05/23/2025

- Features 15mΩ/1200V M3S SiC MOSFET full-bridge and a thermistor with Al2O3 DBC in an F1 package.

onsemi NVBG050N170M1 Silicon Carbide (SiC) MOSFET

05/22/2025

- Features a maximum 76mΩ @ 20V maximum RDS(ON), and 1700V drain-to-source voltage.

檢視：1 - 25，共189項

篩選方式：

TDK-Lambda i1R ORing MOSFET Modules

02/05/2026

- High-efficiency and low-loss power devices designed to replace traditional diodes.

IXYS X4-Class 功率MOSFET

02/02/2026

- Offer low on-state resistance and conduction losses, with improved efficiency.

Qorvo QPD1014A GaN Input Matched Transistors

01/20/2026

- 15W (P3dB), 50Ω input matched discrete GaN-on-SiC HEMTs operating from 30MHz to 1.2GHz.

Qorvo QPD1011A GaN Input Matched Transistors

01/19/2026

- 7W (P3dB), 50Ω input matched discrete GaN-on-SiC HEMTs operating from 30MHz to 1.2GHz.

Qorvo QPD1004A GaN Input Matched Transistors

01/19/2026

- 25W, 50Ω input matched discrete GaN on SiC HEMT operates from 30MHz to 1400MHz on a 50V supply rail.

onsemi NVBYST0D6N08X 80V N-Channel Power MOSFET

12/26/2025

- This device offers a low QRR and soft recovery body diode in a TCPAK1012 (TopCool) package.

Infineon Technologies OptiMOS™ 6 80V Power MOSFETs

12/23/2025

- Sets industry benchmark performance with a wide portfolio offering.

onsemi NVMFD5877NL Dual N-Channel MOSFET

12/19/2025

- Designed for compact and efficient designs including high thermal performance.

Infineon Technologies CoolSiC™ Automotive 750V G2 MOSFETs

12/19/2025

- Engineered to meet the stringent demands of electric vehicle (EV) applications.

STMicroelectronics SGT080R70ILB E-Mode PowerGaN Transistor

12/04/2025

- E-Mode PowerGaN transistor designed for high-efficiency power conversion applications.

onsemi NxT2023N065M3S EliteSiC MOSFETs

12/04/2025

- Feature low effective output capacitance and ultra-low gate charge.

Infineon Technologies 750V TRENCHSTOP™ IGBT7 H7 Discrete Transistors

12/01/2025

- DTO247 package, replaces multiple lower-current transistors in TO247 packages connected in parallel.

onsemi FDC642P-F085 Small Signal MOSFET

11/25/2025

- Offers a high-performance trench technology for extremely low RDS(on) and fast switching speed.

onsemi NTTFS007P02P8 P-Channel Low/Medium Voltage MOSFET

11/25/2025

- Built using PowerTrench technology for extremely low RDS(on) switching performance and ruggedness.

iDEAL Semiconductor iS20M028S1C SuperQ™ 200V N-Ch Power MOSFETs

11/24/2025

- Designed for SMPS and high-efficiency motor drives in a robust PDFN package measuring 5mm x 6mm.

Central Semiconductor 1700V N溝道碳化矽 (SiC) MOSFET

11/20/2025

- These MOSFETS are designed for high-speed switching and fast reverse recovery applications.

onsemi NVD5867NL Single N-Channel Power MOSFET

11/20/2025

- Features 60V drain-to-source voltage, 39mΩ drain-to-source on resistance, and AEC-Q101 qualified.

onsemi NVD6824NL Single N-Channel MOSFETs

11/20/2025

- Offer low RDS(on) to minimize conduction losses and high current capability.

onsemi NVMFS5832NL Single N-Channel Power MOSFET

11/19/2025

- High-performance MOSFET designed for low-voltage applications requiring efficient power switching.

onsemi NVMFS5830NL Single N-Channel Power MOSFET

11/19/2025

- High-efficiency single n-channel power MOSFET designed for demanding power management applications.

onsemi AFGB30T65RQDN IGBT

11/19/2025

- Offers a high figure of merit with low conduction and switching losses.

STMicroelectronics SGT070R70HTO E-Mode PowerGaN Transistor

11/07/2025

- Built on GaN technology and designed for demanding power conversion applications.

Diodes Incorporated 2N7002 N-Channel E-Mode Field Effect Transistors

10/31/2025

- Offers fast switching performance with low gate charge and 60V maximum drain-source voltage.

Comchip Technology AMMBT2222AM NPN Automotive Small Signal Transistor

10/31/2025

- The device has a 75V collector-base voltage rating and a 600mA collector current-continuous rating.

Diodes Incorporated DMTH64M2LPDW Dual N-Channel E-Mode MOSFET

10/31/2025

- Integrates two MOSFETs in a single PowerDI® 5mm x 6mm package with excellent thermal performance.

檢視：1 - 25，共642項

電晶體的類型

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