CY7C1470V25-200BZXC

Infineon Technologies
727-CY1470V25200BZXC
CY7C1470V25-200BZXC

製造商：

說明：
SRAM 72MB (2Mx36) 2.5v 200MHz SRAM

規格書:
ECAD模型:
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供貨情況

庫存：
暫無庫存
工廠前置作業時間：
14 週 工廠預計生產時間。
最少： 105   多個： 105
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
此產品免費航運

Pricing (HKD)

數量 單價
總價
HK$1,536.40 HK$161,322.00
210 報價

商品屬性 屬性值 選擇屬性
Infineon
產品類型: SRAM
RoHS:  
72 Mbit
2 M x 36
3 ns
200 MHz
Parallel
2.625 V
2.375 V
450 mA
0 C
+ 70 C
SMD/SMT
FBGA-165
Tray
品牌: Infineon Technologies
存儲類型: SDR
濕度敏感: Yes
產品類型: SRAM
系列: CY7C1470V25
原廠包裝數量: 105
子類別: Memory & Data Storage
類型: Synchronous
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所選屬性: 0

規格書

CNHTS:
8542319090
CAHTS:
8542320041
USHTS:
8542320041
JPHTS:
8542320194
KRHTS:
8542321020
TARIC:
8542324500
MXHTS:
8542320299
ECCN:
3A991.b.2.b

NoBL Sync SRAM

Infineon Technologies No Bus Latency (NoBL) Burst SRAM eliminates the bus turnaround delay associated with switching between read and write operations to lower latency and increase performance. NoBL SRAM is popular in networking and test equipment applications. Similar to Infineon Standard Synchronous Burst SRAM counterparts, NoBL SRAM is offered in Flow-through and Pipelined architectures. Flow-through parts offer lower latencies, and pipelined parts offer higher operating frequencies, allowing users to select the optimal memory for their application.

Synchronous SRAM

Infineon Technologies Synchronous SRAM offers true random memory access capabilities required for networking and other high-performance applications. The Infineon Synchronous SRAM portfolio is available with several features designed to solve networking and high-performance computing challenges. The portfolio includes standard synchronous SRAM, No Bus Latency SRAM, and QDR® SRAM with various speeds, word widths, densities, and packages. Infineon Synchronous SRAM devices are ideal for many applications, including high-speed network switches & routers, communications infrastructure, test equipment, imaging and video, and high-performance computing.

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