256 Mbit DRAM

結果: 314
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 類型 存儲容量 數據匯流排寬度 最高時鐘頻率 封裝/外殼 組織 存取時間 電源電壓 - 最小值 電源電壓 - 最大值 最低工作溫度 最高工作溫度 系列 封裝
Alliance Memory DRAM 256Mb, 3.3V, 143Mhz 64M x 4 SDRAM 99庫存量
最少: 1
倍數: 1

SDRAM 256 Mbit 4 bit 143 MHz TSOP-II-54 64 M x 4 5.4 ns 3 V 3.6 V 0 C + 70 C AS4C64M4SA Tray
ISSI DRAM 256M (16Mx16) 166MHz 2.5v DDR SDRAM 349庫存量
最少: 1
倍數: 1

SDRAM - DDR 256 Mbit 16 bit 166 MHz TSOP-II-66 16 M x 16 6 ns 2.3 V 2.7 V - 40 C + 85 C IS43R16160D Tray
ISSI DRAM Automotive (-40 to +85C), 256M, 3.3V, SDRAM, 8Mx32, 143MHz, 86 pin, TSOP II (400 mil) RoHS 65庫存量
最少: 1
倍數: 1

SDRAM 256 Mbit 32 bit 143 MHz TSOP-II-86 8 M x 32 5.5 ns 3 V 3.6 V - 40 C + 85 C IS45S32800J Reel
ISSI DRAM 256M, 2.5V, DDR, 16Mx16, 166MHz 116庫存量
最少: 1
倍數: 1

SDRAM - DDR 256 Mbit 16 bit 166 MHz BGA-60 16 M x 16 700 ps 2.3 V 2.7 V - 40 C + 85 C IS43R16160F
ISSI DRAM 256M (16Mx16) 200MHz 2.5v DDR SDRAM 5庫存量
最少: 1
倍數: 1

SDRAM - DDR 256 Mbit 32 bit 200 MHz LFBGA-144 8 M x 32 5 ns 2.3 V 2.7 V 0 C + 70 C IS43R32800D Tray
AP Memory DRAM IoT RAM 256Mb OPI (x8,x16) DDR 250MHz, 1.8V, Ind. Temp., BGA24
4,782預期21/7/2026
最少: 1
倍數: 1

PSRAM (Pseudo SRAM) 256 Mbit 8 bit / 16 bit 250 MHz BGA-24 32 M x 8/16 M x 16 1.62 V 1.98 V - 40 C + 85 C IoT RAM Tray
ISSI DRAM 256Mb, 1.8V, 267MHz 16Mx16 DDR2 SDRAM 426庫存量
最少: 1
倍數: 1

SDRAM - DDR2 256 Mbit 16 bit 266 MHz WBGA-84 16 M x 16 500 ps 1.7 V 1.9 V - 40 C + 95 C IS43DR16160B Tray
ISSI DRAM 256Mb, 1.8V, 333MHz 16Mx16 DDR2 SDRAM 148庫存量
最少: 1
倍數: 1

SDRAM - DDR2 256 Mbit 16 bit 333 MHz BGA-84 16 M x 16 450 ps 1.7 V 1.9 V - 40 C + 95 C IS43DR16160B Tray
ISSI DRAM 256M (16Mx16) 166MHz 2.5v DDR SDRAM 10庫存量
最少: 1
倍數: 1

SDRAM - DDR 256 Mbit 16 bit 166 MHz TSOP-II-66 16 M x 16 6 ns 2.3 V 2.7 V 0 C + 70 C IS43R16160D Tray
Intelligent Memory DRAM SDRAM, 256Mb, 3.3V, 16Mx16, 166MHz (166Mbps), -40C to +85C, TSOPII-54
324預期2/7/2026
最少: 1
倍數: 1

SDRAM 256 Mbit 16 bit 166 MHz TSOP-II-54 16 M x 16 5.4 ns 3 V 3.6 V - 40 C + 85 C IM2516SD Tray
ISSI DRAM 256Mb, 1.8V, 400MHz 16Mx16 DDR2 SDRAM 61庫存量
最少: 1
倍數: 1

SDRAM - DDR2 256 Mbit 16 bit 400 MHz WBGA-84 16 M x 16 400 ps 1.7 V 1.9 V - 40 C + 85 C IS43DR16160B Reel
ISSI DRAM 256Mb, 1.8V, 267MHz 16Mx16 DDR2 SDRAM 49庫存量
最少: 1
倍數: 1

SDRAM - DDR2 256 Mbit 16 bit 266 MHz BGA-84 16 M x 16 500 ps 1.7 V 1.9 V 0 C + 85 C IS43DR16160B Tray
ISSI DRAM 256M, 2.5V, 200Mhz 16Mx16 DDR SDRAM 54庫存量
最少: 1
倍數: 1

SDRAM - DDR 256 Mbit 16 bit 200 MHz TSOP-II-66 16 M x 16 5 ns 2.3 V 2.7 V - 40 C + 85 C IS46R16160D Tray
Intelligent Memory DRAM SDRAM, 256Mb, 3.3V, 32Mx8, 166MHz (166Mbps), 0C to +70C, TSOPII-54
108預期7/8/2026
最少: 1
倍數: 1

SDRAM 256 Mbit 8 bit 166 MHz TSOP-II-54 32 M x 8 5.4 ns 3 V 3.6 V 0 C + 70 C IM2508SD Tray
Infineon Technologies S80KS2562GABHI020
Infineon Technologies DRAM SPCM
1,014在途量
最少: 1
倍數: 1

HyperRAM 256 Mbit 8 bit 200 MHz FBGA-24 32 M x 8 35 ns 1.7 V 2 V - 40 C + 85 C Tray
ISSI DRAM 256M, 3.3V, SDRAM, 8Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, IT, T&R
7,000在途量
最少: 1
倍數: 1
: 2,500

SDRAM 256 Mbit 32 bit 166 MHz BGA-90 8 M x 32 6.5 ns 3 V 3.6 V - 40 C + 85 C IS42S32800J Reel, Cut Tape, MouseReel
ISSI DRAM 256M, 3.3V, SDRAM, 8Mx32, 143Mhz, 90 ball BGA (8mmx13mm) RoHS, IT
2,904在途量
最少: 1
倍數: 1

SDRAM 256 Mbit 32 bit 143 MHz BGA-90 8 M x 32 6.5 ns 3 V 3.6 V - 40 C + 85 C IS42S32800J
ISSI DRAM 256M, 3.3V, SDRAM 16Mx16, 166MHz
5,832在途量
最少: 1
倍數: 1

SDRAM 256 Mbit 16 bit 166 MHz TSOP-II-54 1 M x 16 6 ns 3 V 3.6 V 0 C + 70 C IS42S16160J Tray
ISSI DRAM 256M, 3.3V, SDRAM, 16Mx16, 143MHz, 54 pin TSOP II RoHS, IT, T&R
6,000在途量
最少: 1
倍數: 1
: 1,500

SDRAM 256 Mbit 8 bit/16 bit 143 MHz TSOP-II-54 32 M x 8/16 M x 16 5.5 ns 3 V 3.6 V - 40 C + 85 C Reel, Cut Tape, MouseReel
ISSI DRAM 256M, 3.3V, SDRAM, 8Mx32, 166Mhz, 86 pin TSOP II RoHS
1,295在途量
最少: 1
倍數: 1

SDRAM 256 Mbit 32 bit 166 MHz TSOP-II-86 8 M x 32 6.5 ns 3 V 3.6 V 0 C + 70 C IS42S32800J
ISSI DRAM Automotive (-40 to +85C), 256M, 3.3V, SDRAM, 8Mx32, 143MHz, 90 ball BGA (8mmx13mm) RoHS
240預期5/11/2026
最少: 1
倍數: 1

SDRAM 256 Mbit 32 bit 143 MHz BGA-90 8 M x 32 5.5 ns 3 V 3.6 V - 40 C + 85 C IS45S32800J Reel
ISSI DRAM 256M, 1.8V, 133Mhz 16Mx16 Mobile SDR
1,185在途量
最少: 1
倍數: 1

SDRAM Mobile 256 Mbit 16 bit 133 MHz BGA-54 16 M x 16 5.5 ns 1.7 V 1.95 V - 40 C + 85 C IS42VM16160K Tray
ISSI DRAM 256M, 2.5V, 166Mhz 16Mx16 Mobile SDR
672預期16/7/2026
最少: 1
倍數: 1

SDRAM Mobile 256 Mbit 16 bit 166 MHz BGA-54 16 M x 16 6 ns 2.3 V 3 V - 40 C + 85 C IS42RM16160K Tray
ISSI DRAM 256M, 3.3V, SDRAM 16Mx16, 166MHz
2,480在途量
最少: 1
倍數: 1

SDRAM 256 Mbit 16 bit 166 MHz TSOP-II-54 1 M x 16 6 ns 3 V 3.6 V - 40 C + 85 C IS42S16160J
ISSI DRAM 256M, 3.3V, SDRAM, 16Mx16, 166Mhz, 54 ball BGA (8mmx8mm) RoHS, IT
1,195在途量
最少: 1
倍數: 1

SDRAM 256 Mbit 8 bit/16 bit 166 MHz BGA-54 32 M x 8/16 M x 16 6.5 ns 3 V 3.6 V - 40 C + 85 C