128 Mbit DRAM

結果: 169
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 類型 存儲容量 數據匯流排寬度 最高時鐘頻率 封裝/外殼 組織 存取時間 電源電壓 - 最小值 電源電壓 - 最大值 最低工作溫度 最高工作溫度 系列 封裝
ISSI DRAM 128M, 3.3V, SDRAM, 8Mx16, 143Mhz, 54 pin TSOP II (400 mil) RoHS, T&R
1,146在途量
最少: 1
倍數: 1
: 1,500

SDRAM 128 Mbit 8 bit/16 bit 143 MHz TSOP-II-54 16 M x 8/8 M x 16 5.4 ns 3 V 3.6 V 0 C + 70 C Reel, Cut Tape
ISSI DRAM 128M, 3.3V, SDRAM, 4Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, IT 425庫存量
720預期6/7/2026
最少: 1
倍數: 1

SDRAM 128 Mbit 32 bit 166 MHz BGA-90 4 M x 32 6.5 ns 3 V 3.6 V - 40 C + 85 C Tray
ISSI DRAM 128M, 3.3V, SDRAM, 4Mx32, 166Mhz, 86 pin TSOP II (400 mil) RoHS
1,728在途量
最少: 1
倍數: 1

SDRAM 128 Mbit 32 bit 166 MHz TSOP-II-86 4 M x 32 6.5 ns 3 V 3.6 V 0 C + 70 C
ISSI DRAM 128M, 3.3V, SDRAM, 4Mx32, 166Mhz, 86 pin TSOP II (400 mil) RoHS, IT
2,592在途量
最少: 1
倍數: 1

SDRAM 128 Mbit 32 bit 166 MHz TSOP-II-86 4 M x 32 6.5 ns 3 V 3.6 V - 40 C + 85 C
ISSI DRAM Automotive (-40 to +105C), 128M, 3.3V, SDRAM, 8Mx16, 143Mhz, 54 ball BGA (8mmx8mm) ROHS
520在途量
最少: 1
倍數: 1

SDRAM 128 Mbit 16 bit 143 MHz BGA-54 8 M x 16 5.4 ns 3 V 3.6 V - 40 C + 105 C
ISSI DRAM 128M, 3.3V, SDRAM, 8Mx16, 166Mhz, 54 ball BGA (8mmx8mm) ROHS, IT, T&R
2,496預期22/10/2026
最少: 1
倍數: 1
: 2,500

SDRAM 128 Mbit 8 bit/16 bit 166 MHz BGA-54 16 M x 8/8 M x 16 6.5 ns 3 V 3.6 V - 40 C + 85 C Reel, Cut Tape, MouseReel
ISSI DRAM 128M, 3.3V, SDRAM, 4Mx32, 166Mhz, 86 pin TSOP II (400 mil) RoHS, IT, T&R
1,496預期17/8/2026
最少: 1
倍數: 1
: 1,500

SDRAM 128 Mbit 32 bit 166 MHz TSOP-II-86 4 M x 32 6.5 ns 3 V 3.6 V - 40 C + 85 C Reel, Cut Tape
Alliance Memory DRAM SDRAM, 128Mb, 4M x 32, 3.3V, 90-ball BGA, 166 MHz, Industrial Temp - Tray
377預期30/10/2026
最少: 1
倍數: 1

SDRAM 128 Mbit 32 bit 166 MHz TFBGA-90 4 M x 32 5.4 ns 3 V 3.6 V - 40 C + 85 C AS4C4M32S Tray
ISSI DRAM 128M, 3.3V, M-SDRAM 4Mx32, 133Mhz, RoHS
240預期24/7/2026
最少: 1
倍數: 1

SDRAM Mobile 128 Mbit 32 bit 133 MHz BGA-90 4 M x 32 8 ns 2.7 V 3.6 V - 40 C + 85 C IS42SM32400H Reel
ISSI DRAM Automotive (-40 to +85C), 128M, 3.3V, SDRAM, 4Mx32, 166MHz, 86 pin TSOP II (400 mil) RoHS
108預期1/12/2026
最少: 1
倍數: 1

SDRAM 128 Mbit 32 bit 166 MHz TSOP-II-86 4 M x 32 5.4 ns 3 V 3.6 V - 40 C + 85 C
ISSI DRAM Automotive (-40 to +105C), 128M, 3.3V, SDRAM, 4Mx32, 166MHz, 86 pin TSOP II (400 mil) RoHS
216預期22/6/2026
最少: 1
倍數: 1

SDRAM 128 Mbit 32 bit 166 MHz TSOP-II-86 4 M x 32 5.4 ns 3 V 3.6 V - 40 C + 105 C
Alliance Memory AS4C4M32SA-7TCN
Alliance Memory DRAM SDRAM, 128MB, 4M X 32, 3.3V, 86PIN TSOP II, 143 MHZ, COMMERCIAL TEMP - Tray
107預期2/7/2026
最少: 1
倍數: 1

SDRAM 128 Mbit 32 bit 143 MHz TSOP-II-86 4 M x 32 5.4 ns 3 V 3.6 V 0 C + 70 C Tray
AP Memory DRAM IoT RAM 128Mb QSPI (x1,x4) SDR 144/84MHz, HS, 1.8V, Ind. Temp, WLCSP 無庫存前置作業時間 15 週
最少: 5,000
倍數: 5,000
: 5,000

PSRAM (Pseudo SRAM) 128 Mbit 4 bit 144 MHz WLCSP-15 16 M x 8 1.62 V 1.98 V - 40 C + 85 C Reel
AP Memory DRAM IoT RAM 128Mb OPI (x8,x16) DDR 200MHz, 1.8V, Ind. Temp., WLCSP Suggested Alt APS12808O-OBR-WB same density NRND 無庫存前置作業時間 20 週
最少: 5,000
倍數: 5,000
: 5,000

PSRAM (Pseudo SRAM) 128 Mbit 8 bit / 16 bit 200 MHz WLCSP-24 16 M x 8/8 M x 16 1.62 V 1.98 V - 40 C + 85 C IoT RAM Reel
Infineon Technologies S70KL1283DPBHV020
Infineon Technologies DRAM SPCM 無庫存前置作業時間 26 週
最少: 3,380
倍數: 3,380

HyperRAM 128 Mbit 8 bit 166 MHz 16 M x 8 36 ns 2.7 V 3.6 V - 40 C + 105 C Tray
AP Memory APS12808O-OBR-WB
AP Memory DRAM IoT RAM 128Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., WLCSP 無庫存前置作業時間 15 週
最少: 5,000
倍數: 5,000
: 5,000

PSRAM (Pseudo SRAM) 128 Mbit 8 bit 200 MHz WLCSP-15 16 M x 8 1.62 V 1.98 V - 40 C + 85 C Reel
Alliance Memory DRAM DDR1, 128Mb, 8M x 16, 2.5V, 66pin TSOP II, 200 MHz, Commercial Temp A Die, T&R 無庫存前置作業時間 6 週
最少: 1,000
倍數: 1,000
: 1,000

SDRAM - DDR 128 Mbit 16 bit 200 MHz TSOP-II-66 8 M x 16 700 ps 2.3 V 2.7 V 0 C + 70 C AS4C8M16D1A Reel
Alliance Memory DRAM DDR1, 128Mb, 8M x 16, 2.5V, 66pin TSOP II, 200 MHz, Industriall Temp A Die, T&R 無庫存前置作業時間 8 週
最少: 1,000
倍數: 1,000
: 1,000

SDRAM - DDR 128 Mbit 16 bit 200 MHz TSOP-II-66 8 M x 16 700 ps 2.3 V 2.7 V - 40 C + 85 C AS4C8M16D1A Reel
Alliance Memory DRAM SDR, 128Mb, 8M x 16, 3.3V, 54pin TSOP II, 166 Mhz, automotive temp(.63), T&R, A Die 無庫存前置作業時間 10 週
最少: 1,000
倍數: 1,000
: 1,000

SDRAM 128 Mbit 16 bit 166 MHz TSOP-II-54 8 M x 16 5 ns 3 V 3.6 V - 40 C + 105 C AS4C8M16SA Reel
Alliance Memory DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54pin BGA, 143 Mhz, Commercial Temp - Tape & Reel 無庫存前置作業時間 6 週
最少: 2,500
倍數: 2,500
: 2,500

SDRAM 128 Mbit 16 bit 143 MHz TFBGA-54 8 M x 16 5.4 ns 3 V 3.6 V 0 C + 70 C Reel
Alliance Memory DRAM SDR, 128Mb, 8M x 16, 3.3V, 54pin TSOPII, 166 Mhz, industrial temp(.63) Tape and Reel, B Die 無庫存前置作業時間 6 週
最少: 1,000
倍數: 1,000
: 1,000
SDRAM 128 Mbit 16 bit 166 MHz TSOP-II-54 8 M x 16 5 ns 3 V 3.6 V - 40 C + 85 C Reel
ISSI DRAM 128M, 3.3V, Mobile SDRAM, 4Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, IT, T&R 無庫存前置作業時間 24 週
最少: 2,500
倍數: 2,500
: 2,500

SDRAM Mobile 128 Mbit 166 MHz BGA-90 4 M x 32 8 ns 2.7 V 3.6 V - 40 C + 85 C IS42SM32400H Reel
ISSI DRAM Automotive (-40 to +85C), 128M, 3.3V, SDRAM, 8Mx16, 166Mhz, 54 ball BGA (8mmx8mm) ROHS, T&R 暫無庫存
最少: 2,500
倍數: 2,500
: 2,500

SDRAM 128 Mbit 16 bit 166 MHz BGA-54 8 M x 16 6 ns 3 V 3.6 V - 40 C + 85 C IS45S16800F Reel
ISSI DRAM Automotive (-40 to +85C), 128M, 3.3V, SDRAM, 8Mx16, 166Mhz, Cu 54 pin TSOP II (400 mil) RoHS, T&R 暫無庫存
最少: 1,500
倍數: 1,500
: 1,500

SDRAM 128 Mbit 16 bit 166 MHz TSOP-II-54 8 M x 16 6 ns 3 V 3.6 V - 40 C + 85 C IS45S16800F Reel
ISSI DRAM Automotive (-40 to +85C), 128M, 3.3V, SDRAM, 8Mx16, 166Mhz, 54 pin TSOP II (400 mil) RoHS, T&R 暫無庫存
最少: 1,500
倍數: 1,500
: 1,500

SDRAM 128 Mbit 16 bit 166 MHz TSOP-II-54 8 M x 16 6 ns 3 V 3.6 V - 40 C + 85 C IS45S16800F Reel