Ultra-Low Power SRAM

ISSI Ultra-Low Power SRAM includes high-speed (35ns, 45ns, 55ns access time) CMOS devices as well as Asynchronous SRAM with x8, x16, and x32 configurations. ISSI IS62/65WV2568DALL and IS62/65WV2568DBLL are high-speed, 2Mb static RAMs organized as 256K words by 8 bits. These SRAM devices are fabricated using ISSI high-performance CMOS technology. This highly reliable process, coupled with innovative circuit design techniques, yields high-performance and low-power-consumption devices. ISSI Asynchronous SRAMs include 5V, High-Speed/Low Power, Ultra-Low Power, and Pseudo SRAM (PSRAM)/CellularRAM™. These Asynchronous SRAMs are used throughout Consumer, Industrial, Automotive, Telecom, and Networking applications.

結果: 4
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 存儲容量 組織 存取時間 接口類型 電源電壓 - 最大值 電源電壓 - 最小值 電源電流 - 最大值 最低工作溫度 最高工作溫度 安裝風格 封裝/外殼 封裝
ISSI SRAM 4M (512Kx8) 55ns Async SRAM 106庫存量
最少: 1
倍數: 1
最大: 200

4 Mbit 512 k x 8 55 ns Parallel 3.6 V 2.5 V 45 mA - 40 C + 85 C SMD/SMT SOP-32 Tray
ISSI SRAM 1Mb 128Kx8 55ns Async SRAM 215庫存量
最少: 1
倍數: 1
最大: 200

1 Mbit 128 k x 8 55 ns Parallel 3.6 V 2.5 V 8 mA - 40 C + 85 C SMD/SMT SOP-32 Tube
ISSI SRAM 4Mb, Low Power/Power Saver,Async,512K x 8,55ns,2.5v-3.6v,32 Pin SOP, RoHS 無庫存前置作業時間 12 週
最少: 1,000
倍數: 1,000
: 1,000

4 Mbit 55 ns 3.6 V 2.5 V 15 mA - 40 C + 85 C SMD/SMT SOP-32 Reel
ISSI SRAM 1Mb, Low Power/Power Saver,Async,128K x 8,55ns,2.5v-3.6v,32 Pin SOP, RoHS 無庫存前置作業時間 12 週
最少: 1,000
倍數: 1,000
: 1,000

1 Mbit 128 k x 8 55 ns Parallel 3.6 V 2.5 V 8 mA - 40 C + 85 C SMD/SMT SOP-32 Reel