CY7C1482BV33-200BZI

Infineon Technologies
727-7C1482BV33200BZI
CY7C1482BV33-200BZI

製造商：

說明：
SRAM 72MB (4Mx18) 4.6v 200MHz SRAM

規格書:
ECAD模型:
下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。
更多資訊
瞭解更多關於Infineon Technologies CY7C1482BV33-200BZI的資訊

供貨情況

庫存：
暫無庫存
工廠前置作業時間：
14 週 工廠預計生產時間。
最少： 210   多個： 210
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
此產品免費航運

Pricing (HKD)

數量 單價
總價
HK$3,007.70 HK$631,617.00

商品屬性 屬性值 選擇屬性
Infineon
產品類型: SRAM
RoHS: N
72 Mbit
4 M x 18
3 ns
200 MHz
Parallel
3.6 V
3.135 V
500 mA
- 40 C
+ 85 C
SMD/SMT
FBGA-165
Tray
品牌: Infineon Technologies
組裝國家: Not Available
擴散國: Not Available
原產國: TW
存儲類型: SDR
濕度敏感: Yes
產品類型: SRAM
系列: CY7C1482BV33
原廠包裝數量: 210
子類別: Memory & Data Storage
類型: Synchronous
每件重量: 657 mg
找到產品:
若要顯示類似商品，請選取至少一個核選方塊
至少選中以上一個核取方塊以顯示在此類別中類似的產品。
所選屬性: 0

規格書

此功能需要啟用JavaScript。

CNHTS:
8542319090
CAHTS:
8542320041
USHTS:
8542320041
JPHTS:
854232019
KRHTS:
8542321020
TARIC:
8542324500
MXHTS:
8542320201
ECCN:
3A991.b.2.b

NoBL Sync SRAM

Infineon Technologies No Bus Latency (NoBL) Burst SRAM eliminates the bus turnaround delay associated with switching between read and write operations to lower latency and increase performance. NoBL SRAM is popular in networking and test equipment applications. Similar to Infineon Standard Synchronous Burst SRAM counterparts, NoBL SRAM is offered in Flow-through and Pipelined architectures. Flow-through parts offer lower latencies, and pipelined parts offer higher operating frequencies, allowing users to select the optimal memory for their application.

CY7C1021D CMOS Static RAM

Infineon Technologies CY7C1021D CMOS Static RAM is a high-performance device organized as 65,536 words by 16 bits. The CY7C1021D CMOS static RAM has an automatic power down feature that significantly reduces power consumption when deselected. This Infineon device has low active power of 80mA at 10ns and low CMOS standby power of 3mA.The CY7C1021D static RAM also features 2.0V data retention and independent control of upper and lower bits.

Synchronous SRAM

Infineon Technologies Synchronous SRAM offers true random memory access capabilities required for networking and other high-performance applications. The Infineon Synchronous SRAM portfolio is available with several features designed to solve networking and high-performance computing challenges. The portfolio includes standard synchronous SRAM, No Bus Latency SRAM, and QDR® SRAM with various speeds, word widths, densities, and packages. Infineon Synchronous SRAM devices are ideal for many applications, including high-speed network switches & routers, communications infrastructure, test equipment, imaging and video, and high-performance computing.

Standard Sync SRAM

Infineon Technologies Standard Synchronous SRAM consists of Synchronous Burst SRAM with a maximum speed of 250MHz, core voltages up to 3.3V, and densities up to 72Mb. The offering is available in bus widths of x18, x36, and x72 in TQFP100, BGA119, and FBGA165 industry-standard packages. Standard Synchronous Burst SRAM devices are used in industrial electronics, instrumentation, and military applications. They are often used as data buffers (temporary storage) and can be accessed randomly through their high-speed, Single Data Rate (SDR) interface. The Standard Synchronous Burst SRAM is ideal for read-intensive operations due to their low latency and common I/O. Designers have a choice between Flow-through or Pipelined architectures. Flow-through parts offer lower latencies, and pipelined parts offer higher operating frequencies, allowing users to select the optimal memory for their application.

發生意外的錯誤。


有問題嗎？ 請瀏覽幫助中心。
有關特定訂單的問題，請登入您的帳戶。

如有其他問題，請致電800-346-6873或發送郵件至 help@mouser.com 與我們聯絡。