Low Power CMOS SRAM

Alliance Memory Low Power Asynchronous Static Random Access Memory (SRAM) devices are fabricated using high-performance, high-reliability CMOS technology. Alliance Memory CMOS SRAM devices are designed for low-power applications and are particularly well-suited for battery backup nonvolatile memory applications. AS6C8008 is a 8,388,608-bit device organized as 1,048,576 words by 8-bits. AS6C1616 is a 16,777,216-bit device organized as 1,048,576 words by 16-bits. AS6C6264A is a 65,536-bit device organized as 8,192 words by 8 bits. AS6C62256 is a 262,144-bit device organized as 32,768 words by 8-bits. Available in different packages/cases.

結果: 2
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 存儲容量 組織 存取時間 接口類型 電源電壓 - 最大值 電源電壓 - 最小值 電源電流 - 最大值 最低工作溫度 最高工作溫度 安裝風格 封裝/外殼 封裝
Alliance Memory SRAM 256K, 2.7-5.5V, 55ns 32K x 8 Asynch SRAM 1,210庫存量
最少: 1
倍數: 1

256 kbit 32 k x 8 55 ns Parallel 5.5 V 2.7 V 45 mA 0 C + 70 C Through Hole PDIP-28 Tube
Alliance Memory SRAM 64K, 2.7-5.5V, 55ns 8K x 8 Asynch SRAM 445庫存量
最少: 1
倍數: 1

64 kbit 8 k x 8 55 ns Parallel 5.5 V 2.7 V 45 mA 0 C + 70 C Through Hole PDIP-28 Tube