Dynamic Random Access Memory (DRAM)

Intelligent Memory Dynamic Random Access Memory (DRAM) includes a full range of JEDEC-compliant DRAMs and ECC DRAMs (SDRAM, DDR, DDR2, DDR3, DDR4, LPDDR4). From an application's point of view, these components work like a monolithic device. The DRAM devices allow for maximum levels of memory density without altering existing board layouts or designs.

記憶體和資料儲存設備類型

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結果: 55
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS
Intelligent Memory DRAM SDRAM, 256Mb, 3.3V, 32Mx8, 166MHz (166Mbps), 0C to +70C, TSOPII-54 444庫存量
最少: 1
倍數: 1

Intelligent Memory DRAM DDR3 4Gb, 1.35V/1.5V, 256Mx16, 933MHz (1866Mbps), -40C to +95C, FBGA-96 81庫存量
418預期20/3/2026
最少: 1
倍數: 1

Intelligent Memory DRAM DDR2 512Mb, 1.8V, 32Mx16, 400MHz (800Mbps), 0C to +95C, FBGA-84 209庫存量
最少: 1
倍數: 1

Intelligent Memory DRAM SDRAM, 64Mb, 3.3V, 4Mx16, 166MHz (166Mbps), -40C to +85C, FBGA-54 241庫存量
最少: 1
倍數: 1

Intelligent Memory DRAM SDRAM, 64Mb, 3.3V, 4Mx16, 166MHz (166Mbps), -40C to +85C, TSOPII-54 43庫存量
最少: 1
倍數: 1

Intelligent Memory DRAM SDRAM, 64Mb, 3.3V, 2Mx32, 166MHz (166Mbps), -40C to +85C, TSOPII-86 284庫存量
最少: 1
倍數: 1

Intelligent Memory DRAM ECC SDRAM, 256Mb, 3.3V, 8Mx32, 166MHz (166Mbps), -40C to +85C, TSOPII-86 176庫存量
最少: 1
倍數: 1

Intelligent Memory DRAM ECC SDRAM, 512Mb, 3.3V, 64Mx8, 133MHz (133Mbps), -40C to +85C, TSOPII-54 79庫存量
最少: 1
倍數: 1

Intelligent Memory 記憶體模組 記憶體模組, DDR3, DIMM, 16GB, x72, 240pin UDIMM, 1600MT/s, PC3-12800, 1.35V, ECC, Double Rank, 30mm, C-Temp 4庫存量
最少: 1
倍數: 1

Intelligent Memory DRAM SDRAM, 128Mb, 3.3V, 4Mx32, 166MHz (166Mbps), -40C to +85C, TSOPII-86 364庫存量
最少: 1
倍數: 1

Intelligent Memory DRAM ECC DDR2, 1Gb, 1.8V, 64Mx16, 400MHz (800Mbps), -40C to +95C, FBGA-84 111庫存量
最少: 1
倍數: 1

Intelligent Memory DRAM ECC SDRAM, 512Mb, 3.3V, 16Mx32, 166MHz (166Mbps), -40C to +85C, TSOPII-86 144庫存量
最少: 1
倍數: 1

Intelligent Memory DRAM DDR3 4Gb, 1.35V/1.5V, 256Mx16, 933MHz (1866Mbps), 0C to +95C, FBGA-96
412預期25/2/2026
最少: 1
倍數: 1

Intelligent Memory DRAM SDRAM, 256Mb, 3.3V, 16Mx16, 166MHz (166Mbps), -40C to +85C, TSOPII-54
232預期1/4/2026
最少: 1
倍數: 1

Intelligent Memory DRAM ECC SDRAM, 512Mb, 3.3V, 32Mx16, 133MHz (133Mbps), 0C to +70C, TSOPII-54
216預期27/4/2026
最少: 1
倍數: 1

Intelligent Memory DRAM ECC SDRAM, 512Mb, 3.3V, 32Mx16, 133MHz (133Mbps), -40C to +85C, TSOPII-54
108預期22/4/2026
最少: 1
倍數: 1

Intelligent Memory DRAM DDR2 1Gb, 1.8V, 64Mx16, 400MHz (800Mbps), -40C to +95C, FBGA-84 無庫存前置作業時間 8 週
最少: 1
倍數: 1

Intelligent Memory DRAM DDR3 2Gb, 1.35V/1.5V, 128Mx16, 800MHz (1600Mbps), 0C to +95C, FBGA-96 無庫存前置作業時間 8 週
最少: 1
倍數: 1

Intelligent Memory DRAM DDR3 4Gb, 1.35V/1.5V, 512Mx8, 933MHz (1866Mbps), 0C to +95C, FBGA-78 無庫存前置作業時間 6 週
最少: 1
倍數: 1

Intelligent Memory DRAM DDR3 4Gb, 1.35V/1.5V, 512Mx8, 933MHz (1866Mbps), -40C to +95C, FBGA-78 無庫存前置作業時間 6 週
最少: 1
倍數: 1

Intelligent Memory DRAM SDRAM, 64Mb, 3.3V, 2Mx32, 166MHz (166Mbps), -40C to +85C, FBGA-54 無庫存前置作業時間 8 週
最少: 1
倍數: 1

Intelligent Memory DRAM DDR3 8Gb, 1.35V/1.5V, 1Gx8 (1CS), 933MHz (1866Mbps), -40C to +95C, FBGA-78 前置作業時間 6 週
最少: 1
倍數: 1

Intelligent Memory DRAM DDR3 8Gb, 1.35V/1.5V, 512Mx16 (2CS), 933MHz (1866Mbps), -40C to +95C, FBGA-96 無庫存前置作業時間 6 週
最少: 1
倍數: 1

Intelligent Memory DRAM ECC SDRAM, 512Mb, 3.3V, 64Mx8, 133MHz (133Mbps), 0C to +70C, TSOPII-54 前置作業時間 12 週
最少: 1
倍數: 1

Intelligent Memory 記憶體模組 記憶體模組, DDR3, DIMM, 16GB, x64, 240pin UDIMM, 1600MT/s, PC3-12800, 1.35V, Non-ECC, Double Rank, 30mm, C-Temp 無庫存前置作業時間 6 週
最少: 1
倍數: 1