IMZA120R020M1HXKSA1

Infineon Technologies
726-IMZA120R020M1HXK
IMZA120R020M1HXKSA1

製造商:

說明:
碳化矽MOSFET CoolSiC 1200 V, 20 mohm SiC Trench MOSFET in TO247-4 package

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庫存:
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在途量:
1,438
預期2/3/2026
960
預期1/4/2026
工廠前置作業時間:
26
工廠預計生產時間數量大於所顯示的數量。
此產品已報告長備貨期。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$164.07 HK$164.07
HK$139.90 HK$1,399.00
HK$121.00 HK$12,100.00
HK$120.92 HK$58,041.60

商品屬性 屬性值 選擇屬性
Infineon
產品類型: 碳化矽MOSFET
RoHS:  
Through Hole
TO-247-4
N-Channel
1 Channel
1.2 kV
98 A
19 mOhms
- 10 V, + 23 V
4.2 V
83 nC
- 55 C
+ 150 C
375 W
Enhancement
品牌: Infineon Technologies
封裝: Tube
產品: MOSFETs
產品類型: SiC MOSFETS
原廠包裝數量: 240
子類別: Transistors
技術: SiC
零件號別名: IMZA120R020M1H SP005448293
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CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

CoolSiC™ 1200V SiC Trench MOSFETs

Infineon Technologies CoolSiC™ 1200V SiC Trench MOSFETs combine the strong physical characteristics of Silicon Carbide with unique features that increase the device's performance, robustness, and ease of use. The CoolSiC 1200V SiC Trench MOSFETs are built on a state-of-the-art trench semiconductor process optimized to deliver the lowest application losses and the highest reliability in operation. Suitable for high-temperature and harsh environment operations, these devices enable the simplified and cost-effective deployment of the highest system efficiency.