F3L8MR12W2M1HPB11BPSA1

Infineon Technologies
726-F3L8MR12W2M1HPB1
F3L8MR12W2M1HPB11BPSA1

製造商:

說明:
MOSFET模組 3-Level 1200 V CoolSiC MOSFET Easy Module

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 25

庫存:
25 可立即送貨
工廠前置作業時間:
8 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
此產品免費航運

Pricing (HKD)

數量 單價
總價
HK$904.69 HK$904.69
HK$813.53 HK$8,135.30
HK$813.45 HK$87,852.60
25,002 報價

商品屬性 屬性值 選擇屬性
Infineon
產品類型: MOSFET模組
RoHS:  
Si
SMD/SMT
- 40 C
+ 150 C
M1H
Tray
品牌: Infineon Technologies
配置: 3-Phase Inverter
產品: SiC IGBT Modules
產品類型: MOSFET Modules
原廠包裝數量: 18
子類別: Discrete and Power Modules
公司名稱: EasyPACK CoolSiC
零件號別名: F3L8MR12W2M1HP_B11 SP005562921
找到產品:
若要顯示類似商品,請選取至少一個核選方塊
至少選中以上一個核取方塊以顯示在此類別中類似的產品。
所選屬性: 0

此功能需要啟用JavaScript。

CNHTS:
8504409100
USHTS:
8541290055
TARIC:
8541290000
ECCN:
EAR99

1200V CoolSiC™模組

英飛凌科技1200V CoolSiC™模組為具備出色效率與系統彈性等級的碳化矽 (SiC) MOSFET模組。這些模組採用近閾值電路 (NTC) 和PressFIT接點技術。此CoolSiC模組具有高電流密度、同級最佳的切換和傳導損耗以及低電感設計的特點,可提供高頻運作、更高的功率密度,以及經過最佳化的開發週期時間與成本。

1200V CoolSiC™ M1H Modules

Infineon Technologies 1200V CoolSiC™ M1H Modules offer EV Charging and other inverter designers opportunities to achieve never-before-seen efficiency and power density levels.

Reliable & Efficient Power Supply for Data Centers

Infineon Technologies Reliable and Efficient Power Supply for Data Centers are scalable solutions with power ratings from approximately 5kW to 50/60kW. This Infineon solution is ideal for uninterruptible power supplies (UPS) that require high power density and energy efficiency. These modules leverage various chip technologies, including Si IGBT, CoolSiC™ hybrid, and CoolSiC MOSFET, to meet diverse requirements for cost-effectiveness and performance. Infineon's portfolio addresses all system levels of a UPS with different voltage classes, and are set to expand offerings to include lower power rating classes.