GS66516B 650V GaN低側散熱電晶體

GaN Systems GS66516B 650V GaN power transistors are designed for very low junction-to-case thermal resistance for demanding high power applications. The GS66516B is offered in a low inductance, low thermal resistance GaNPX™ package with a bottom-side cooled configuration. GaN on silicon power transistors allow for high current, high voltage breakdown, and high switching frequency. The high-current die performance and yield of the GS66516B are accomplished through patented Island Technology® cell layout. The GS66516B features reverse current capability, zero reverse recovery loss, and source-sense for optimal high-speed design. Applications include on-board battery chargers, 400V DC/DC converters, inverters, UPS/industrial motor drives, fast battery charging, solar/wind power, and more.
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