TGA2237 Wideband Distributed Amplifier

Qorvo TGA2237 Wideband Distributed Amplifier is fabricated on the Qorvo production 0.25um Gallium-Nitride (GaN) on Silicon Carbide (SiC) process. The TGA2237 operates from 0.03GHz to 2.5GHz and provides 10W of saturated output power with 13dB of large signal gain and greater than 50.% power-added efficiency. The broadband performance supports both radar and communication applications across defense and commercial markets as well as electronic warfare. The TGA2237 amplifier is fully matched to 50Ω at both RF ports allowing for simple system integration. DC blocks are required on both RF ports and the drain voltage must be injected through an off chip bias-tee on the RF output port.

結果: 2
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 操作頻率 工作電源電壓 運作供電電流 增益 類型 安裝風格 封裝/外殼 技術 P1dB - 壓縮點 最低工作溫度 最高工作溫度 系列 封裝
Qorvo RF放大器 .03-2.5GHz 10W GaN Sm Sig. Gain 19dB 無庫存前置作業時間 20 週
最少: 25
倍數: 25

2.5 GHz 30 V 360 mA 19 dB Power Amplifiers SMD/SMT Die GaN 32 dBm TGA2237 Gel Pack
Qorvo RF放大器 30-2500MHz 10W GaN PAE > 50% Gain 19dB 無庫存前置作業時間 16 週
最少: 25
倍數: 25

30 MHz to 2.5 GHz 32 V 360 mA 19 dB Power Amplifiers SMD/SMT QFN-32 GaN SiC 33 dBm - 40 C + 85 C TGA2237 Waffle