NSVMSD1819A-RT1G

onsemi
863-NSVMSD1819A-RT1G
NSVMSD1819A-RT1G

製造商:

說明:
雙極結晶體管 - BJT SS SC70 GP XSTR NPN 50V

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 11,376

庫存:
11,376 可立即送貨
工廠前置作業時間:
31 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$2.22 HK$2.22
HK$1.93 HK$19.30
HK$1.45 HK$145.00
HK$0.896 HK$448.00
HK$0.699 HK$699.00
完整捲(訂購多個3000)
HK$0.411 HK$1,233.00
HK$0.362 HK$2,172.00
HK$0.304 HK$2,736.00
HK$0.255 HK$6,120.00

商品屬性 屬性值 選擇屬性
onsemi
產品類型: 雙極結晶體管 - BJT
RoHS:  
Si
SMD/SMT
SC-70-3
NPN
Single
200 mA
60 V
60 V
7 V
500 mV
150 mW
+ 150 C
MSD1819A-R
Reel
Cut Tape
品牌: onsemi
連續集電極電流: 100 mA
直流電最大增益hFE: 340
產品類型: BJTs - Bipolar Transistors
原廠包裝數量: 3000
子類別: Transistors
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所選屬性: 0

USHTS:
8541210095
TARIC:
8541210000
ECCN:
EAR99

MSD1819A-R General Purpose & Low VCE Transistor

onsemi MSD1819A-R General Purpose and Low VCE Transistor is designed for amplifier applications. This NPN transistor features a high current gain (hFE) from 210 to 460 and a low VCE <0.5V. The NPN transistor comes in the SC-70/SOT-323 package, designed for low-power surface mount applications. The silicon epitaxial planar transistor is AEC-Q101 qualified and PPAP capable. This low VCE transistor is Pb and halogen/BFR-free. Typical applications include reverse battery protection, DC-DC converter output driver, and high-speed switching.