1EDB7275FXUMA1

Infineon Technologies
726-1EDB7275FXUMA1
1EDB7275FXUMA1

製造商：

說明：
閘極驅動器 ISOLATED DRIVER

規格書:
ECAD模型:
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庫存量: 6,782

庫存：
6,782
可立即送貨
在途量:
5,000
預期14/5/2026
工廠前置作業時間：
39
週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
包裝:
完整捲（訂購多個2500）

Pricing (HKD)

數量 單價
總價
零卷 / MouseReel™ †
HK$14.71 HK$14.71
HK$10.77 HK$107.70
HK$9.78 HK$244.50
HK$8.71 HK$871.00
HK$8.15 HK$2,037.50
HK$6.53 HK$3,265.00
HK$6.08 HK$6,080.00
完整捲（訂購多個2500）
HK$5.87 HK$14,675.00
HK$5.80 HK$43,500.00
† HK$55.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

商品屬性 屬性值 選擇屬性
Infineon
產品類型: 閘極驅動器
RoHS:  
Isolated Gate Drivers
SMD/SMT
1 Driver
1 Output
9.8 A
3 V
15 V
8.3 ns
5 ns
- 40 C
+ 125 C
Reel
Cut Tape
MouseReel
品牌: Infineon Technologies
濕度敏感: Yes
產品類型: Gate Drivers
原廠包裝數量: 2500
子類別: PMIC - Power Management ICs
公司名稱: EiceDRIVER
零件號別名: 1EDB7275F SP005351350
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所選屬性: 0

規格書

Product Catalogs

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CNHTS:
8542399000
USHTS:
8542310030
ECCN:
EAR99

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.

EiceDRIVER隔離式與非隔離式閘極驅動器IC

英飛凌EiceDRIVER™隔離式與非隔離式閘極驅動器IC適用於MOSFET、IGBT和IGBT模組，能提供經過最佳化的高低電壓閘極驅動器解決方案。這些隔離式與非隔離式閘極驅動器IC是專為打造可靠且高效的應用所設計。經過最佳化的閘極驅動器配置，對於無論是獨立形式或功率模組等所有電源開關而言，都是必不可少的。英飛凌閘極驅動器提供介於0.1A到最高10A的多樣化典型輸出電流選項，適合電源裝置的所有尺寸。

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

CoolGaN™氮化鎵HEMT

Infineon CoolGaN™氮化鎵HEMT相比矽提供卓越優勢，包括終極效率、可靠性、功率密度和最高品質。CoolGaN晶體管採用最可靠技術製造，設計用於為開關模式電源提供最高效率和功率密度。該裝置與傳統矽MOSFET原理相似，透過p-GaN閘極結構實現增強模式閘極驅動偏置。

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