QPC1006

Qorvo
772-QPC1006
QPC1006

製造商：

說明：
RF 開關 IC 50W, 0.15-2.8GHz GaN SP3T

規格書:
ECAD模型:
下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。
更多資訊
瞭解更多關於Qorvo QPC1006的資訊

供貨情況

庫存：
暫無庫存
工廠前置作業時間：
24 週 工廠預計生產時間。
最少： 100   多個： 100
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
此產品免費航運

Pricing (HKD)

數量 單價
總價
完整捲（訂購多個100）
HK$652.42 HK$65,242.00
200 報價

商品屬性 屬性值 選擇屬性
Qorvo
產品類型: RF 開關 IC
RoHS:  
SP3T
150 MHz
2.8 GHz
0.3 dB to 1 dB
30 dB
+ 275 C
SMD/SMT
QFN-24
GaN
QPC1006
Reel
品牌: Qorvo
開發套件: QPC1006EVB
高控制電壓: - 50 V
濕度敏感: Yes
開關數: Single
運作供電電流: 3 mA
Pd - 功率消耗 : 14 W
產品類型: RF Switch ICs
原廠包裝數量: 100
子類別: Wireless & RF Integrated Circuits
找到產品:
若要顯示類似商品，請選取至少一個核選方塊
至少選中以上一個核取方塊以顯示在此類別中類似的產品。
所選屬性: 0

規格書

Models

PCN

此功能需要啟用JavaScript。

CNHTS:
8542399000
USHTS:
9030820000
ECCN:
5A991.g

QPC1006 Single-Pole, Triple–Throw (SP3T) Switch

Qorvo QPC1006 Single-Pole, Triple–Throw (SP3T) Switch is fabricated on Qorvo’s QGaN25 0.25um GaN on SiC production process. Operating from 0.15 to 2.8GHz, the QPC1006 typically supports 50W input power handling at control voltages of 0/−40V for CW and pulsed RF operations. This switch maintains a low insertion loss of less than 1.0dB and greater than 30dB isolation, making it ideal for high-power switching applications across defense and commercial platforms. The Qorvo QPC1006 is offered in a 4mm x 4mm plastic overmolded QFN package.

GaN Solutions

Qorvo is your smart RF partner for building solutions using Gallium Nitride (GaN) technology. No longer a technology just for defense and aerospace applications, GaN is enabling higher and higher frequencies in more complex applications, such as phased arrays, radar, base transceiver stations for 5G, cable TV (CATV), VSAT, and defense communications. Qorvo provides proven, record-setting GaN circuit reliability and compact, high-efficiency products. This paves the way for more robust performance, lower operating costs and longer operational lifetimes.

GaN Switches

Qorvo Gallium Nitride (GaN) Switches are suited for RF Switching applications and feature high breakdown voltages combined with the low on-resistance and off-state capacitance. This enables a dramatic increases in power handling. GaAs FET switches are widely used in the RF industry, and typically used for power levels on the order of a few watts or less. GaN FETs are able to use the same circuit architectures to handle power levels on the order of tens of watts.

發生意外的錯誤。


有問題嗎？ 請瀏覽幫助中心。
有關特定訂單的問題，請登入您的帳戶。

如有其他問題，請致電800-346-6873或發送郵件至 help@mouser.com 與我們聯絡。