SCTxxxAW7/SCT3xxxKW7 SiC Trench-Type 7-Pin MOSFETs

ROHM Semiconductor SCT3xxxAW7/SCT3xxxKW7 SiC Trench-Type 7-Pin MOSFETs utilize a proprietary trench gate structure to reduce ON resistance by 50% and input capacitance by 35% over planar-type SiC MOSFETs. The MOSFETs include an additional pin that separates the driver and power source pins, eliminating the inductance component's effects in reducing Vgs, ensuring faster switching speeds. The ROHM Semiconductor Trench-Type MOSFETs feature a high voltage resistance, low ON resistance, fast switching speed, simple to drive, and easy to parallel.

結果: 8
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最高工作溫度 Pd - 功率消耗 通道模式
ROHM Semiconductor 碳化矽MOSFET Transistor SiC MOSFET 650V 60mO 3rd Gen TO-263-7L 1,757庫存量
最少: 1
倍數: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 38 A 78 mOhms - 4 V, + 22 V 5.6 V 58 nC + 175 C 159 W Enhancement
ROHM Semiconductor 碳化矽MOSFET Transistor SiC MOSFET 1200V 40mO 3rd Gen TO-263-7L 500庫存量
最少: 1
倍數: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 56 A 52 mOhms - 4 V, + 22 V 5.6 V 107 nC + 175 C 267 W Enhancement
ROHM Semiconductor 碳化矽MOSFET TO263 650V 70A N-CH SIC 978庫存量
最少: 1
倍數: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 70 A 39 mOhms - 4 V, + 22 V 5.6 V 104 nC + 175 C 267 W Enhancement
ROHM Semiconductor 碳化矽MOSFET Transistor SiC MOSFET 650V 120mO 3rd Gen TO-263-7L 2,773庫存量
最少: 1
倍數: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 21 A 156 mOhms - 4 V, + 22 V 5.6 V 38 nC + 175 C 100 W Enhancement
ROHM Semiconductor 碳化矽MOSFET TO263 1.2KV 30A N-CH SIC 399庫存量
最少: 1
倍數: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 30 A 104 mOhms - 4 V, + 22 V 5.6 V 60 nC + 175 C 159 W Enhancement
ROHM Semiconductor 碳化矽MOSFET Transistor SiC MOSFET 1200V 160mO 3rd Gen TO-263-7L 1,926庫存量
最少: 1
倍數: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 17 A 208 mOhms - 4 V, + 22 V 5.6 V 42 nC + 175 C 100 W Enhancement
ROHM Semiconductor 碳化矽MOSFET Transistor SiC MOSFET 650V 80mO 3rd Gen TO-263-7L 855庫存量
最少: 1
倍數: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 29 A 104 mOhms - 4 V, + 22 V 5.6 V 48 nC + 175 C 125 W Enhancement
ROHM Semiconductor 碳化矽MOSFET Transistor SiC MOSFET 1200V 105mO 3rd Gen TO-263-7L 766庫存量
最少: 1
倍數: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 23 A 137 mOhms - 4 V, + 22 V 5.6 V 51 nC + 175 C 125 W Enhancement