SGT65R65AL

STMicroelectronics
511-SGT65R65AL
SGT65R65AL

製造商:

說明:
氮化鎵場效應管 650 V, 49 mOhm typ., 25 A, e-mode PowerGaN transistor

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

供貨情況

庫存:
0

您仍可購買此商品作為延期交貨訂單。

工廠前置作業時間:
62 週 工廠預計生產時間。
此產品已報告長備貨期。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
包裝:
完整捲(訂購多個3000)

Pricing (HKD)

數量 單價
總價
零卷 / MouseReel™
HK$79.98 HK$79.98
HK$55.32 HK$553.20
HK$45.05 HK$4,505.00
HK$44.72 HK$22,360.00
完整捲(訂購多個3000)
HK$38.80 HK$116,400.00
† HK$55.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: 氮化鎵場效應管
RoHS:  
SMD/SMT
PowerFLAT-4
N-Channel
1 Channel
650 V
25 A
65 mOhms
+ 6 V
1.8 V
5.4 nC
- 55 C
+ 150 C
305 W
品牌: STMicroelectronics
組裝國家: Not Available
擴散國: Not Available
原產國: CN
濕度敏感: Yes
封裝: Reel
封裝: Cut Tape
封裝: MouseReel
產品類型: GaN FETs
系列: SGT
原廠包裝數量: 3000
子類別: Transistors
技術: GaN-on-Si
晶體管類型: E-Mode
類型: RF Power MOSFET
每件重量: 76 mg
找到產品:
若要顯示類似商品,請選取至少一個核選方塊
至少選中以上一個核取方塊以顯示在此類別中類似的產品。
所選屬性: 0

此功能需要啟用JavaScript。

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

SGT65R65AL e-mode PowerGaN Transistors

STMicroelectronics SGT65R65AL e-mode PowerGaN Transistors are 650V, 25A transistors combined with well-established packaging technology. The STMicroelectronics SGT65R65AL has a resulting G-HEMT device that provides extremely low conduction losses, high current capability, and ultra-fast switching operation. The device can enable high power density and unbeatable efficiency performances.

SGT G-HEMT™ E-Mode PowerGaN Transistors

STMicroelectronics SGT G-HEMT™ E-Mode PowerGaN Transistors are high‑performance, enhancement‑mode (normally‑off) GaN devices designed to deliver exceptionally fast switching, low conduction losses, and high power density across demanding power‑conversion applications. These transistors leverage Gallium Nitride’s wide‑bandgap advantages to achieve extremely low capacitances, minimal gate charge, and zero reverse‑recovery charge, enabling superior efficiency compared to traditional silicon power switches.